Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor
An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.
1. A method of manufacturing an organic thin film transistor, comprising:
forming source and drain electrodes;
forming a hydrophobic material layer covering the source and drain electrodes on an entire surface of a layer on which the source and drain electrodes are formed;
removing the hydrophobic material layer at least on a region of each of the source and drain electrodes;
forming a conductive polymer layer on regions where the hydrophobic material layer is removed; and
forming an organic semiconductor layer to be electrically connected to the source and drain electrodes.
2. The method of claim 1 , wherein the removing of the hydrophobic material layer comprising removing the hydrophobic material layer on an edge of the source electrode in a drain electrode direction and removing the hydrophobic material layer on an edge of the drain electrode in a source electrode direction.
3. The method of claim 1 , wherein the removing of the hydrophobic material layer comprising removing the hydrophobic material layer on the source electrode and removing the hydrophobic material layer on the drain electrode.
4. The method of claim 1 , wherein one of the source electrode, the drain electrode and combination thereof is formed of a transparent material.
5. The method of claim 4 , wherein one of the source electrode, the drain electrode and a combination thereof is formed of ITO, IZO, ZnO, or In 2 O 3 .
6. The method of claim 1 , wherein the hydrophobic material layer is formed of a surface treatment agent that has a self-assembled monolayer including silane moiety having 1-3 reactive halogen atoms or alkoxy moieties, and including 1-3 hydrophobic moieties.
7. The method of claim 6 , wherein the hydrophobic material layer is formed of a surface treatment agent that has a hydrophobic self-assembled monolayer having a trichlorosilanyl moiety or a trialkoxysilanyl moiety at an end thereof.
8. The method of claim 7 , wherein the hydrophobic material layer is formed of OTS.
9. The method of claim 1 , wherein the conductive polymer layer is formed of PEDOT or PANI.
10. The method of claim 1 , wherein the forming of the hydrophobic material layer is performed using a spin coating method or a dipping method.
11. The method of claim 1 , wherein the removing of the hydrophobic material layer comprises irradiating a laser beam onto regions where the hydrophobic material layer is removed.
12. The method of claim 1 , wherein the forming of the conductive polymer layer comprises using a spin coating method, a dipping method, or an inkjet printing method.
13. The method of claim 1 , wherein the forming of the conductive polymer layer comprises:
forming the conductive polymer layer in regions on the source and drain electrodes where the hydrophobic material layer is removed using a spin coating method, a dipping method, or an inkjet printing method; and
removing the conductive polymer layer remaining on a region between the source and drain electrodes.
14. The method of claim 13 , wherein the removing of the conductive polymer layer remaining on a region between the source and drain electrodes comprises irradiating a laser beam, ultraviolet rays, or an electron beam onto the region between the source and drain electrodes.
15. The method of claim 1 , further comprising:
forming a gate insulating film covering the organic semiconductor layer; and
forming a gate electrode on the gate insulating film.
16. The method of claim 1 , prior to forming the source and drain electrodes, further comprising:
forming a gate electrode; and
forming a gate insulating film covering the gate electrode,
wherein the source and drain electrodes are formed on the gate insulating film.