Semiconductor device manufacturing method and substrate processing apparatus
A thin film can be formed on a substrate at a low temperature with a practicable film-forming rate. There is provided a semiconductor device manufacturing method for forming an oxide or nitride film on a substrate. The method comprises: exposing the substrate to a source gas; exposing the substrate to a modification gas comprising an oxidizing gas or a nitriding gas, wherein an atom has electronegativity different from that of another atom in molecules of the oxidizing gas or the nitriding gas; and exposing the substrate to a catalyst. The catalyst has acid dissociation constant pK a in a range from 5 to 7, but a pyridine is not used as the catalyst.
1. A semiconductor device manufacturing method comprising:
exposing a substrate placed in a process chamber to a source gas;
stopping an exposure of the substrate to the source gas and purging the source gas;
exposing the substrate to a catalyst and a modification gas comprising an oxidizing gas or a nitriding gas,
wherein an atom has electronegativity different from that of another atom in molecules of the oxidizing gas or the nitriding gas; and
stopping an exposure of the substrate to the catalyst and the modification gas, and purging the catalyst and the modification gas,
wherein the exposure of the substrate to the source gas and the exposure of the substrate to the catalyst and the modification gas are performed while heating the substrate, so as to form an oxide or nitride film on the substrate, and
wherein the process chamber is kept at a pressure lower than a vapor pressure of a byproduct corresponding to a surface temperature of the substrate during the exposure of the substrate to the catalyst and the modification gas, the byproduct being produced by a reaction between the catalyst and the source gas and starting to sublimate at the vapor pressure.
2. The semiconductor device manufacturing method of claim 1 , wherein the process chamber is kept at a temperature equal to or lower than 200° C.
3. The semiconductor device manufacturing method of claim 2 , wherein the process chamber is kept at about 100° C.
4. The semiconductor device manufacturing method of claim 1 , wherein an acid dissociation constant pKa of the catalyst exclusive of pyridine ranges from 5 to 7.
5. The semiconductor device manufacturing method of claim 1 , wherein the catalyst is supplied to the substrate simultaneously with the source gas during the exposure of the substrate to the source gas.