Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
View Patent ↗A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
1. An electrode for use in a vacuum treatment apparatus for treating a substrate, said electrode having a surface with peripheral edges that define a rectangular or square shape when viewed from above, said surface having a generally convex profile along a respective edge cross section taken along each said peripheral edge, which profile gradually changes on approaching the center of said electrode to become a concave profile along a center cross section that is parallel to the respective edge cross section and is taken through the center of said surface.
2. An electrode according to claim 1 , said surface being machined as a plurality of steps, which together provide a contour of said surface that conforms to the respective convex and concave profiles in claim 1 .
3. An electrode according to claim 2 , each of said plurality of steps having a step height that does not exceed 0.1 mm.
4. A vacuum treatment apparatus for treating a substrate, comprising at least two electrodes as set forth in claim 1 , said at least two electrodes defining a process space.
5. A vacuum treatment apparatus according to claim 4 , wherein said at least two electrodes are shaped equally.
6. A vacuum treatment apparatus according to claim 4 , further comprising a radiofrequency power supply capable to supply frequencies of 13.56 MHz or higher connected with said electrode.
7. A vacuum treatment apparatus according to claim 4 , wherein at least one of said electrodes is connectable with a power supply at least two connection points.
8. A vacuum treatment apparatus according to claim 4 , further comprising a substrate positioned in said process space, wherein a space between said substrate and at least one of said electrodes is at least partially furnished with a corrective dielectric layer.
9. A vacuum treatment apparatus according to claim 8 , wherein one surface of the corrective dielectric layer complements the shape of said surface of said electrode.
10. A vacuum treatment apparatus according to claim 8 , wherein one surface of the corrective dielectric layer is adapted to hold the substrate.
11. A vacuum treatment apparatus according to claim 8 , wherein the corrective dielectric layer comprises vacuum, gas, alumina, zirconia or quartz.
12. A vacuum treatment apparatus according to claim 8 , further comprising a gas inlet system comprising a set of holes in said electrode to provide gases to said process space.