Inexpensive electrode materials to facilitate rutile phase titanium oxide
View Patent ↗This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO 2 ) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.
1. An electronic device, comprising:
a first electrode having a layer consisting primarily of a conductive metal oxide selected from the group of molybdenum dioxide (MoO 2 ), tungsten dioxide (WO 2 ), chromium dioxide (CrO 2 ), manganese dioxide (MnO 2 ), iron dioxide (FeO 2 ), tin dioxide (SnO 2 ), cobalt dioxide (CoO 2 ) and nickel dioxide (NiO 2 ); and
a titanium oxide based dielectric in contact with the layer; and
a second electrode;
where the titanium oxide based dielectric is positioned between the first and second electrodes.
2. The electronic device of claim 1 , where the first electrode consists primarily of molybdenum dioxide (MoO 2 ).
3. The electronic device of claim 1 , where the layer is an interface layer, and where the first electrode includes at least two layers including:
a base layer; and
the interface layer, wherein the base layer consists primarily of a conductive compound selected from the group of molybdenum nitride, tungsten nitride, titanium nitride, chromium nitride or cobalt nitride.
4. The electronic device of claim 1 , where the conductive metal oxide is doped with nitrogen.
5. The electronic device of claim 1 , embodied as a capacitor selected from one of a cylinder-shaped capacitor, a pedestal-shaped capacitor, and a crown-shaped capacitor.
6. An electronic device, comprising:
a substrate;
a metal oxide based dielectric;
a first electrode between the substrate and the dielectric, the first electrode having a layer to interface with a dielectric, the layer having a lattice structure with lattice constants each within ten percent of lattice constants for rutile-phase titanium dioxide, a work function of at least 4.8 Electron Volts, and a Gibbs free energy of at most −400 kiloJoules per mole; and
a second electrode on opposite side of the metal oxide based dielectric from the layer.
7. The electronic device of claim 6 , where the metal oxide based dielectric is rutile-phase titanium dioxide (TiO 2 ), such that the metal oxide based dielectric layer is a rutile-phase titanium dioxide (TiO 2 ) based dielectric layer.
8. The electronic device of claim 6 , where the layer includes a primary compound selected from the group of molybdenum dioxide (MoO 2 ), tungsten dioxide (WO 2 ), chromium dioxide (CrO 2 ), manganese dioxide (MnO 2 ), iron dioxide (FeO 2 ), tin dioxide (SnO 2 ), cobalt dioxide (CoO 2 ) and nickel dioxide (NiO 2 ).
9. The electronic device of claim 6 , where the layer includes a molybdenum dioxide (MoO 2 ) layer being contact with the metal oxide based dielectric.
10. The electronic device of claim 6 , where the layer is an interface layer and where the first electrode includes at least two layers including:
a base layer; and
the interface layer, wherein the base layer consists primarily of a conductive compound selected from the group of molybdenum nitride, tungsten nitride, titanium nitride, chromium nitride or cobalt nitride.
11. The electronic device of claim 6 , further comprising a MOS transistor on the substrate, wherein the first electrode connects electrically to the MOS transistor.
12. A memory device, comprising:
an array of memory cells, where each memory cell includes a capacitor and an access device; and
array control circuitry;
where the capacitor for each memory cell includes a dielectric consisting primarily of rutile-phase titanium dioxide (TiO 2 ), a first electrode between the substrate and the dielectric, the first electrode having a compound with (a) a work function of at least 4.8 Electron Volts, (b) a Gibbs free energy of at most −400 kiloJoules per mole and (c) a lattice structure substantially compatible with rutile-phase titanium dioxide, and a second electrode, the dielectric positioned between the first electrode and the second electrode.
13. The memory device of claim 12 , where the compound is selected from the group of molybdenum dioxide (MoO 2 ), tungsten dioxide (WO 2 ), chromium dioxide (CrO 2 ), manganese dioxide (MnO 2 ), iron dioxide (FeO 2 ), tin dioxide (SnO 2 ), cobalt dioxide (CoO 2 ) and nickel dioxide (NiO 2 ).
14. The memory device of claim 12 , where the compound is molybdenum dioxide (MoO 2 ).
15. The memory device of claim 12 , where the first electrode includes at least two layers including:
a base layer; and
an interface layer that includes the compound.
16. The memory device of claim 15 , where the base layer consists primarily of a conductive material selected from the group of molybdenum nitride, tungsten nitride, titanium nitride, chromium nitride or cobalt nitride.
17. The memory device of claim 12 , where the compound has a lattice structure with lattice constants each within ten percent of lattice constants for rutile-phase titanium dioxide (TiO 2 ).
18. The memory device of claim 12 , where the compound has a lattice structure with lattice constants each within five percent of lattice constants for rutile-phase titanium dioxide (TiO 2 ).
19. The memory device of claim 12 , where the access device is a MOS transistor, and the first electrode connects electrically to one of source and drain electrodes of the MOS transistor.
20. The memory device of claim 19 , where a gate electrode of the MOS transistor connects to a word line which is controlled by the array control circuitry.