Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/−2% HF or buffered HF acid, 3.8%+/−0.5% NH 4 F pH buffer, 59.7%+/−5% ethylene glycol, and the balance H 2 O.
1. A method for selectively removing a non-metallic deposit from an aluminum containing faceplate comprising:
contacting an aluminum containing faceplate including a plurality of holes with a solution until a non-metallic deposit is removed from the faceplate, the solution comprising:
15.5%+/−2% HF or buffered HF acid;
3.8%+/−0.5% NH 4 F pH buffer;
59.7%+/−5% a straight or branched chain-diol or -triol from the C 2 to C 6 chain; and
water;
wherein the non-metallic deposit is a dielectric.
2. The method of claim 1 , wherein the straight or branched chain-diol or -triol from the C 2 to C 6 chain is ethylene glycol.
3. The method of claim 1 , wherein the dielectric is selected from the group consisting of a-SiC:H, SiO 2 and SiC.
4. The method of claim 3 , wherein contacting comprises submersing the faceplate in the solution for 180 minutes or longer.
5. The method of claim 4 , wherein the plurality of holes have a diameter, and the diameter of the plurality of holes is not increased by 0.0001 inch during the contacting.
6. The method of claim 5 , further comprising exposing the faceplate to an acid to increase the surface roughness of a surface of the faceplate after contacting the faceplate with the solution.
7. The method of claim 5 , wherein the faceplate includes surface staining due to arcing across holes.
8. The method of claim 4 , wherein the contacting is performed at approximately room temperature.