Semiconductor laser and method of manufacturing semiconductor laser
View Patent ↗Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, λa is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and <( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of λw+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of λa−2 (nm) in the resonator direction.
1. A semiconductor laser comprising:
a substrate; and
an active layer that is provided over said substrate, said active layer in a region near at least one end surface is alloyed by the diffusion of impurities, the band gap of said active layer in said region near said end surface is wider than that of said active layer in a region other than said region near said end surface, and
wherein (λa−λw)>15 (nm) and Lt is less than 25 (μm), where “λw (nm)” is the wavelength of light corresponding to the band gap of said active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, “λa” (nm) is the wavelength of light corresponding to the band gap of said active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and equal to or less than ( 7/10)L from said one end surface in a resonator direction, “L” is said resonator length, and “Lt” is the length of a transition region provided between the position of said active layer with a band gap corresponding to a light wavelength of λw+2 (nm) and the position of said active layer with a band gap corresponding to a light wavelength of λa−2 (nm) in said resonator direction.
2. The semiconductor laser as set forth in claim 1 , further comprising:
a clad layer that is provided over said active layer; and
a cap layer that is provided over said clad layer,
wherein the solid solubility limit concentration of said cap layer with respect to said impurities is higher than that of said clad layer.
3. The semiconductor laser as set forth in claim 2 , wherein a material forming said cap layer includes GaAs.
4. The semiconductor laser as set forth in claim 2 , wherein a material forming said clad layer includes GaInP, AlGaInP or AlGaAs.
5. The semiconductor laser as set forth in claim 1 , wherein a material forming said active layer includes GaInP, AlGaInP or AlGaAs.
6. The semiconductor laser as set forth in claim 1 , wherein said impurities are Zn.
7. The semiconductor laser as set forth in claim 1 , further comprising:
a current block layer that is provided over said active layer,
wherein said semiconductor laser is self-oscillated.
8. The semiconductor laser as set forth in claim 1 , wherein the Lt of said transition region is equal to or less than 12 μm and equal to or more than 1 μm.
9. The semiconductor laser as set forth in claim 1 , further comprising:
a ridge-shaped strip or a ridge-buried-shaped strip.
10. The semiconductor laser as set forth in claim 2 , wherein a groove is provided in said cap layer between said region near said end surface and said region other than said region near said end surface.
11. The semiconductor laser as set forth in claim 1 , wherein said resonator length L is equal to or less than 500 μm.