Metal Oxide Semiconductor Films, Structures and Methods
Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped; by use of selected dopant elements.
1 . A semiconductor material or structure, comprising:
ZnBeO or ZnCdOSe semiconductor alloy materials with energy band gap values between approximately 1.75 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
2 . A semiconductor material or structure, comprising:
ZnBeO semiconductor alloy materials with energy band gap values between approximately 3.3 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
3 . A semiconductor material or structure, comprising:
ZnBeO and ZnCdOSe semiconductor alloy materials that are undoped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
4 . A semiconductor material or structure, comprising:
ZnBeO semiconductor alloy materials that are undoped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV, wherein a selected atomic fraction of Be or Zn is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
5 . A semiconductor material or structure, comprising:
ZnBeO or ZnCdOSe semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
6 . A semiconductor material or structure, comprising:
ZnBeO semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
7 . A semiconductor material or structure, comprising:
ZnBeO and ZnCdOSe semiconductor alloy materials that are n-type doped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
8 . A semiconductor material or structure, comprising:
ZnBeO semiconductor alloy materials that are n-type doped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and wherein the semiconductor material or structure is produced by a hybrid beam deposition process.
9 . A semiconductor material or structure, comprising:
ZnBeO or ZnCdOSe semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values,
wherein dopant for the p-type zinc oxide semiconductor alloy materials is at least one element selected from Group 1, 11, 5 and 15 elements.
10 . A semiconductor material or structure, comprising:
ZnBeO semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and
wherein dopant for the p-type zinc oxide semiconductor alloy materials is at least one element selected from Group 1, 11, 5 and 15 elements.
11 . A semiconductor material or structure, comprising:
ZnBeO or ZnCdOSe semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and
wherein dopant for the p-type ZnBeO or ZnCdOSe semiconductor alloy materials is at least one element selected from the group consisting of arsenic, phosphorus, antimony and nitrogen.
12 . A semiconductor material or structure, comprising:
ZnBeO semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV, wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and
wherein dopant for the p-type ZnBeO semiconductor alloy materials is at least one element selected from the group consisting of arsenic, phosphorus, antimony and nitrogen.
13 - 21 . (canceled)