METAL CAPTURING APPARATUS AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME
A metal capturing apparatus and an atomic layer deposition apparatus, which are capable of discharging an exhaust gas from a process chamber, in which a metal atomic layer is deposited on a substrate using a reaction gas containing a metal catalyst, without a scrubber, and easily reusing the metal catalyst contained in the exhaust gas. The metal capturing apparatus includes a capturing chamber having a capturing space, a capturing plate disposed at one side of the capturing chamber and partially inserted into the capturing chamber, a refrigerant source feeding a refrigerant cooling the capturing plate, and an attachment unit attaching the capturing plate to the capturing chamber. The atomic layer deposition apparatus includes a process chamber, a vacuum pump connected to an exhaust port of the process chamber, and a metal capturing apparatus disposed between the process chamber and the vacuum pump.
1 . A metal capturing apparatus comprising:
a capturing chamber having a capturing space;
a capturing plate disposed at one side of the capturing chamber and partially inserted into the capturing chamber;
a refrigerant source feeding a refrigerant cooling the capturing plate; and
an attachment unit attaching the capturing plate to the capturing chamber.
2 . The metal capturing apparatus according to claim 1 , wherein the capturing plate comprises:
a body attached to the capturing chamber; and
at least one capturing finger inserted into the capturing chamber.
3 . The metal capturing apparatus according to claim 2 , wherein the capturing plate comprises a plurality of capturing fingers inserted into the capturing chamber and stacked in the same direction as a flow of an exhaust gas passing through the capturing chamber.
4 . The metal capturing apparatus according to claim 2 , further comprising a sealing member interposed between the capturing chamber and the body.
5 . The metal capturing apparatus according to claim 2 , wherein the attachment unit is located at an edge of the body of the capturing plate.
6 . The metal capturing apparatus according to claim 1 , wherein the capturing plate comprises a refrigerant pipe therein through which the refrigerant flows.
7 . The metal capturing apparatus according to claim 1 , wherein the refrigerant comprises helium (He) gas.
8 . A atomic layer deposition (ALD) apparatus comprising:
a process chamber performing an ALD process;
a vacuum pump connected to an exhaust port of the process chamber; and
a metal capturing apparatus disposed between the process chamber and the vacuum pump,
wherein the metal capturing apparatus comprises:
a capturing chamber having a capturing space;
a capturing plate partially inserted into the capturing chamber;
a refrigerant source feeding a refrigerant cooling the capturing plate; and
an attachment unit attaching the capturing plate to the capturing chamber.
9 . The atomic layer deposition apparatus according to claim 8 , wherein the capturing plate comprises:
a body attached to the capturing chamber; and
at least one capturing finger inserted into the capturing chamber.
10 . The atomic layer deposition apparatus according to claim 9 , wherein the capturing plate comprises a plurality of capturing fingers inserted into the capturing chamber and stacked in the same direction as a flow of an exhaust gas passing through the capturing chamber.
11 . The atomic layer deposition apparatus according to claim 9 , further comprising a sealing member interposed between the capturing chamber and the body of the capturing plate.
12 . The atomic layer deposition apparatus according to claim 9 , wherein the attachment unit is located at an edge of the body of the capturing plate.
13 . The atomic layer deposition apparatus according to claim 8 , wherein the capturing plate comprises a refrigerant pipe therein through which the refrigerant flows.
14 . The atomic layer deposition apparatus according to claim 8 , wherein the refrigerant comprises helium (He) gas.
15 . The atomic layer deposition apparatus according to claim 8 , wherein the process chamber comprises:
a chamber body;
an inflow pipe introducing a reaction gas or a purge gas into the chamber body;
a shower head uniformly spraying the reaction gas or the purge gas introduced through the inflow pipe on a substrate;
a support chuck supporting the substrate; and
an exhaust pipe exhausting a metal catalyst remaining in the chamber body.
16 . The atomic layer deposition apparatus according to claim 15 , wherein the support chuck comprises a temperature controller maintaining the temperature of the supported substrate.
17 . The metal capturing apparatus according to claim 1 , wherein the attachment unit selectively detaches the capturing plate from the capturing chamber.
18 . The atomic layer deposition apparatus according to claim 8 , wherein the attachment unit selectively detaches the capturing plate from the capturing chamber.
19 . The metal capturing apparatus according to claim 6 , wherein the refrigerant pipe is disposed in the body of the at least one capturing finger of the capturing plate and is attached to the refrigerant source.
20 . The atomic layer deposition apparatus according to claim 13 , wherein the refrigerant pipe is disposed in the body of the at least one capturing finger of the capturing plate and is attached to the refrigerant source.
21 . A capturing plate of a metal capturing apparatus, the capturing plate comprising:
a capturing finger disposed in a direction traversing the flow of an exhaust gas having metal; and
a body attached to the capturing finger.
22 . The capturing plate of claim 21 , further comprising a refrigerant pipe disposed in the body and the capturing finger.
23 . The capturing plate of claim 21 , wherein the refrigerant pipe is connected to a refrigerant source and feeds a refrigerant to the capturing plate.
24 . The capturing plate of claim 22 , wherein the refrigerant includes helium (He) gas.
25 . The capturing plate of claim 21 , wherein an attachment unit attaches the body of the capturing plate to an apparatus through which the exhaust gas flows.
26 . The capturing plate of claim 25 , wherein the body unit comprises the attachment unit.
27 . A method of capturing metal in an atomic layer deposition (ALD) operation, the method comprising:
disposing a capturing finger in a direction traversing a flow of exhaust gas of the ALD operation;
cooling the capturing finger; and
passing the exhaust gas of the ALD operation over the capturing finger in order to capture metal in the exhaust gas.
28 . The method of claim 27 , wherein a plurality of capturing fingers are disposed in the direction traversing the flow of the exhaust gas of the ALD operation.
29 . The method of claim 27 , further comprising:
removing the capturing finger from the flow of the exhaust gas of the ALD operation; and
collecting the captured metal from the capturing finger.
30 . The method of claim 27 , further comprising discharging the exhaust gas from a chamber in which the ALD operation is performed.
31 . The method of claim 27 , wherein the cooling the capturing finger comprises passing a refrigerant through the capturing finger.
32 . The method of claim 31 , wherein the refrigerant comprises helium (He) gas.