SEMICONDUCTOR DEVICE
Provided is a semiconductor device including: a first n-channel fin-type field effect transistor formed on a first crystal plane; and a second n-channel fin-type field effect transistor formed on the first crystal plane and having a gate length longer than that of the first n-channel fin-type field effect transistor. A side surface of a fin of the first n-channel fin-type field effect transistor and a side surface of a fin of the second n-channel fin-type field effect transistor are both formed on a second crystal plane having a carrier mobility lower than that of the first crystal plane. The width of the fin of the second n-channel fin-type field effect transistor is greater than the width of the fin of the first n-channel fin-type field effect transistor.
1 . A semiconductor device comprising:
a first n-channel fin-type field effect transistor formed on a first crystal plane; and
a second n-channel fin-type field effect transistor formed on the first crystal plane and having a gate length longer than that of the first n-channel fin-type field effect transistor,
wherein a side surface of a fin of the first n-channel fin-type field effect transistor and a side surface of a fin of the second n-channel fin-type field effect transistor are both formed on a second crystal plane having a carrier mobility lower than that of the first crystal plane, and
wherein the width of the fin of the second n-channel fin-type field effect transistor is greater than the width of the fin of the first n-channel fin-type field effect transistor.
2 . The semiconductor device according to claim 1 ,
wherein the first crystal plane is (100) plane.
3 . The semiconductor device according to claim 2 ,
wherein the second crystal plane is (110) plane.
4 . The semiconductor device according to claim 3 , further comprising a first p-channel fin-type field effect transistor formed on the (100) plane,
wherein the width of a fin of the first p-channel fin-type field effect transistor is smaller than the width of the fin of the second n-channel fin-type field effect transistor.
5 . The semiconductor device according to claim 4 , further comprising a second p-channel fin-type field effect transistor formed on the (100) plane and having a gate length longer than that of the first p-channel fin-type field effect transistor,
wherein the width of a fin of the second p-channel fin-type field effect transistor is smaller than the width of the fin of the second n-channel fin-type field effect transistor.
6 . The semiconductor device according to claim 5 ,
wherein a side surface of the fin of the second p-channel fin-type field effect transistor and a side surface of the fin of the first p-channel fin-type field effect transistor are (110) plane.
7 . The semiconductor device according to claim 6 ,
wherein the film thickness of an insulating layer in contact with an upper side surface of the fin of the second p-channel fin-type field effect transistor is greater than the film thickness of the insulating layer in contact with a side surface thereof.
8 . The semiconductor device according to claim 5 ,
wherein the width of the fin of the first p-channel fin-type field effect transistor and the width of the fin of the second n-channel fin-type field effect transistor are equal to or smaller than the height of the respective fins.