IP Library › Granted Patent US 8,981,443
Granted Patent B2
US 8,981,443 · App. 12/716,840 · Granted Mar 17, 2015

Semiconductor device, display device, and electronic appliance

Inventor: Hajime Kimura (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/3241G09G2300/0842G09G2310/0248G09G2310/0262H01L27/3244
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Quick Facts
Patent No.
US 8,981,443
App. No.
12/716,840
Granted
Mar 17, 2015
Kind
B2
Abstract

In case the size of the transistor is enlarged, power consumption of the transistor is increased. Thus, the present invention provides a display device capable of preventing a current from flowing to a display element in signal writing operation without varying potentials of power source lines for supplying a current to the display element per row. In setting a gate-source voltage of a transistor by applying a predetermined current to the transistor, a potential of a gate terminal of the transistor is adjusted so as to prevent a current from flowing to a load connected to a source terminal of the transistor. Therefore, a potential of a wire connected to the gate terminal of the transistor is differentiated from a potential of a wire connected to a drain terminal of the transistor.

Claims (155)

1. A display device comprising:

a display element;

a first transistor comprising a gate electrode, a gate insulating film over the gate electrode and a semiconductor layer over the gate insulating film;

a second transistor;

a third transistor;

a capacitor;

an insulating film over the semiconductor layer, the insulating film comprising a first contact hole and a second contact hole;

a first wire over the insulating film, the first wire being in contact with a first region of the semiconductor layer through the first contact hole; and

a second wire over the insulating film, the second wire being in contact with a second region of the semiconductor layer through the second contact hole,

wherein the semiconductor layer comprises a channel forming region,

wherein the insulating film is in direct contact with the channel forming region and the gate insulating film,

wherein one of a source and a drain of the first transistor is electrically connected to a pixel electrode of the display element through at least the first wire,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wire,

wherein the second wire is constantly supplied with a predetermined potential,

wherein one of a source and a drain of the second transistor is electrically connected to the pixel electrode of the display element,

wherein the other of the source and the drain of the second transistor is electrically connected to a third wire,

wherein a first electrode of the capacitor is electrically connected to the pixel electrode of the display element,

wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a fourth wire, and

wherein the semiconductor layer comprises ZnO.

2. The display device according to claim 1 , wherein the display element comprises an electron ink.

3. A display device comprising:

a display element;

a first transistor comprising a gate electrode, a gate insulating film over the gate electrode and a semiconductor layer over the gate insulating film;

a second transistor;

a third transistor;

a capacitor;

an insulating film over the semiconductor layer, the insulating film comprising a first contact hole and a second contact hole;

a first wire over the insulating film, the first wire being in contact with a first region of the semiconductor layer through the first contact hole; and

a second wire over the insulating film, the second wire being in contact with a second region of the semiconductor layer through the second contact hole,

wherein the semiconductor layer comprises a channel forming region,

wherein the insulating film is in direct contact with the channel forming region and the gate insulating film,

wherein one of a source and a drain of the first transistor is electrically connected to a pixel electrode of the display element through at least the first wire,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wire,

wherein the second wire is constantly supplied with a predetermined potential,

wherein one of a source and a drain of the second transistor is electrically connected to the pixel electrode of the display element,

wherein the other of the source and the drain of the second transistor is electrically connected to a third wire,

wherein a first electrode of the capacitor is electrically connected to the pixel electrode of the display element,

wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a fourth wire, and

wherein the semiconductor layer comprises InGaZnO.

4. The display device according to claim 3 , wherein the display element comprises an electron ink.

5. A display device comprising:

a display element;

a first transistor comprising a gate electrode, a gate insulating film over the gate electrode and a semiconductor layer over the gate insulating film;

a second transistor;

a third transistor;

a capacitor;

an insulating film over the semiconductor layer, the insulating film comprising a first contact hole and a second contact hole;

a first wire over the insulating film, the first wire being in contact with a first region of the semiconductor layer through the first contact hole; and

a second wire over the insulating film, the second wire being in contact with a second region of the semiconductor layer through the second contact hole,

wherein the semiconductor layer comprises a channel forming region,

wherein the insulating film is in direct contact with the channel forming region and the gate insulating film,

wherein one of a source and a drain of the first transistor is electrically connected to a pixel electrode of the display element through at least the first wire,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wire,

wherein the second wire is constantly supplied with a predetermined potential,

wherein one of a source and a drain of the second transistor is electrically connected to the pixel electrode of the display element,

wherein the other of the source and the drain of the second transistor is electrically connected to a third wire,

wherein a first electrode of the capacitor is electrically connected to the pixel electrode of the display element,

wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a fourth wire, and

wherein the semiconductor layer comprises In and Zn.

6. The display device according to claim 5 , wherein the display element comprises an electron ink.

7. A display device comprising:

a display element;

a first transistor comprising a gate electrode, a gate insulating film over the gate electrode and a semiconductor layer over the gate insulating film;

a second transistor;

a third transistor;

a fourth transistor electrically connected to the first transistor in parallel;

a capacitor;

an insulating film over the semiconductor layer, the insulating film comprising a first contact hole and a second contact hole;

a first wire over the insulating film, the first wire being in contact with a first region of the semiconductor layer through the first contact hole; and

a second wire over the insulating film, the second wire being in contact with a second region of the semiconductor layer through the second contact hole,

wherein the semiconductor layer comprises a channel forming region,

wherein the insulating film is in direct contact with the channel forming region and the gate insulating film,

wherein one of a source and a drain of the first transistor is electrically connected to a pixel electrode of the display element through at least the first wire,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wire,

wherein the second wire is constantly supplied with a predetermined potential,

wherein one of a source and a drain of the second transistor is electrically connected to the pixel electrode of the display element,

wherein the other of the source and the drain of the second transistor is electrically connected to a third wire,

wherein a first electrode of the capacitor is electrically connected to the pixel electrode of the display element,

wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a fourth wire, and

wherein the semiconductor layer comprises ZnO.

8. The display device according to claim 7 , wherein the display element comprises an electron ink.

9. A display device comprising:

a display element;

a first transistor comprising a gate electrode, a gate insulating film over the gate electrode and a semiconductor layer over the gate insulating film;

a second transistor;

a third transistor;

a fourth transistor electrically connected to the first transistor in parallel;

a capacitor;

an insulating film over the semiconductor layer, the insulating film comprising a first contact hole and a second contact hole;

a first wire over the insulating film, the first wire being in contact with a first region of the semiconductor layer through the first contact hole; and

a second wire over the insulating film, the second wire being in contact with a second region of the semiconductor layer through the second contact hole,

wherein the semiconductor layer comprises a channel forming region,

wherein the insulating film is in direct contact with the channel forming region and the gate insulating film,

wherein one of a source and a drain of the first transistor is electrically connected to a pixel electrode of the display element through at least the first wire,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wire,

wherein the second wire is constantly supplied with a predetermined potential,

wherein one of a source and a drain of the second transistor is electrically connected to the pixel electrode of the display element,

wherein the other of the source and the drain of the second transistor is electrically connected to a third wire,

wherein a first electrode of the capacitor is electrically connected to the pixel electrode of the display element,

wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a fourth wire, and

wherein the semiconductor layer comprises InGaZnO.

10. The display device according to claim 9 , wherein the display element comprises an electron ink.

11. A display device comprising:

a display element;

a first transistor comprising a gate electrode, a gate insulating film over the gate electrode and a semiconductor layer over the gate insulating film;

a second transistor;

a third transistor;

a fourth transistor electrically connected to the first transistor in parallel;

a capacitor;

an insulating film over the semiconductor layer, the insulating film comprising a first contact hole and a second contact hole;

a first wire over the insulating film, the first wire being in contact with a first region of the semiconductor layer through the first contact hole; and

a second wire over the insulating film, the second wire being in contact with a second region of the semiconductor layer through the second contact hole,

wherein the semiconductor layer comprises a channel forming region,

wherein the insulating film is in direct contact with the channel forming region and the gate insulating film,

wherein one of a source and a drain of the first transistor is electrically connected to a pixel electrode of the display element through at least the first wire,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wire,

wherein the second wire is constantly supplied with a predetermined potential,

wherein one of a source and a drain of the second transistor is electrically connected to the pixel electrode of the display element,

wherein the other of the source and the drain of the second transistor is electrically connected to a third wire,

wherein a first electrode of the capacitor is electrically connected to the pixel electrode of the display element,

wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a fourth wire, and

wherein the semiconductor layer comprises In and Zn.

12. The display device according to claim 11 , wherein the display element comprises an electron ink.

13. A display device comprising:

a display element;

a first transistor comprising a gate electrode, a gate insulating film over the gate electrode and a semiconductor layer over the gate insulating film;

a second transistor;

a third transistor;

a capacitor;

an insulating film over the semiconductor layer, the insulating film comprising a first contact hole and a second contact hole;

a first wire over the insulating film, the first wire being in contact with a first region of the semiconductor layer through the first contact hole; and

a second wire over the insulating film, the second wire being in contact with a second region of the semiconductor layer through the second contact hole,

wherein the semiconductor layer comprises a channel forming region,

wherein the insulating film is in direct contact with the channel forming region and the gate insulating film,

wherein one of a source and a drain of the first transistor is electrically connected to a pixel electrode of the display element through at least the first wire,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wire,

wherein the second wire is constantly supplied with a predetermined potential,

wherein one of a source and a drain of the second transistor is electrically connected to the pixel electrode of the display element,

wherein the other of the source and the drain of the second transistor is electrically connected to a third wire,

wherein a first electrode of the capacitor is electrically connected to the pixel electrode of the display element,

wherein a second electrode of the capacitor is electrically connected to a gate of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor, and

wherein the other of the source and the drain of the third transistor is electrically connected to a fourth wire.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2014
From: KIMURA, HAJIME
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 032958/0956 →
Priority Claims (1)
JP 2005-191145 · Jun 30, 2005 · national
Continuity (2)
Continuation 11425242 · Jun 20, 2006
Related Publication 20100156877A1 · Jun 24, 2010