Multilayered lead frame for a semiconductor light-emitting device
View Patent ↗A lead frame ( 100 ) for a semiconductor device is formed by applying nickel plating ( 102 ), palladium plating ( 103 ), and gold flash plating ( 104 ) substantially entirely to lead frame body ( 101 ) such as copper thin plate in this order, and further applying silver plating ( 105 ) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame ( 100 ) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
1. A semiconductor light-emitting device comprising:
a package that includes a cover made of a transparent resin and a base made of an insulating resin;
a lead including an inner part enclosed in the package and an outer part that is outside the package; and
a semiconductor light-emitting element mounted on the inner part of the lead, wherein:
an outermost coating of the inner part includes a first area and a second area, the first area including silver or silver-alloy, the second area including gold or gold-alloy that is different from the silver-alloy,
the cover is in contact with the first area,
the semiconductor light-emitting element is mounted on the first area, and
an outermost coating of the outer part includes gold or gold-alloy.
2. The semiconductor light-emitting device of claim 1 , wherein:
the lead includes a nickel or nickel-alloy coating, and a palladium or palladium-alloy coating,
in the first area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, and the silver or silver-alloy are applied in the stated order,
in the second area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, and the gold or gold-alloy are applied in the stated order, and
the nickel or nickel-alloy coating and the palladium or palladium-alloy coating substantially entirely cover the lead.
3. The semiconductor light-emitting device of claim 2 , wherein:
the silver or silver-alloy substantially entirely covers the lead, and
in the second area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, the silver or silver-alloy, and the gold or gold-alloy are applied in the stated order.
4. The semiconductor light-emitting device of claim 1 , wherein:
the lead includes a nickel or nickel-alloy coating, and a palladium or palladium-alloy coating,
the gold or gold-alloy substantially entirely covers the lead,
in the first area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, the gold or gold-alloy, and the silver or silver-alloy are applied in the stated order,
in the second area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, and the gold or gold-alloy are applied in the stated order, and
the nickel or nickel-alloy coating and the palladium or palladium-alloy coating substantially entirely cover the lead.
5. The semiconductor light-emitting device of claim 2 , wherein the silver or silver-alloy has a thickness of 0.1 μm or more.
6. A semiconductor light-emitting device comprising:
a package that includes a cover made of a transparent resin and a base made of an insulating resin;
a lead including an inner part enclosed with the package and an outer part that is outside the package; and
a semiconductor light-emitting element mounted on the inner part of the lead, wherein:
an outermost coating of the inner part includes a first area covered with a first metal coating and a second area having a second metal coating,
the cover is in contact with the first area,
the first metal coating has higher light reflectance than the second metal coating, and
the semiconductor light-emitting element is mounted on the first area.
7. The semiconductor light-emitting device of claim 6 , wherein the first metal coating comprises silver or silver alloy and the second metal coating comprises gold or gold alloy.
8. The semiconductor light-emitting device of claim 1 , wherein the semiconductor light-emitting element is mounted on the first area of the inner part.
9. The semiconductor light-emitting device of claim 6 , wherein the semiconductor light-emitting element is mounted on the first area of the inner part.
10. The semiconductor light-emitting device of claim 6 , wherein:
the inner part of the lead is composed of inner leads facing each other,
the semiconductor light-emitting element is mounted on one of the inner leads, and
the first area is an outermost coating of the one of the inner leads on which the semiconductor light-emitting element is mounted, and the second area is an outermost coating of the other of the inner leads on which the semiconductor light-emitting element is not mounted.
11. A semiconductor light-emitting device comprising:
a package that includes a cover made of a transparent resin and a base made of an insulating resin;
a lead including an inner part enclosed in the package and an outer part that is outside the package; and
a semiconductor light-emitting element mounted on the inner part of the lead, wherein:
an outermost coating of the inner part includes a first area and a second area, the first area including silver or silver-alloy, the second area including gold or gold-alloy,
the cover is in contact with the first area,
the lead includes a nickel or nickel-alloy coating, and a palladium or palladium-alloy coating,
in the first area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, and the silver or silver-alloy are applied in the stated order,
in the second area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, and the gold or gold-alloy are applied in the stated order,
the nickel or nickel-alloy coating and the palladium or palladium-alloy coating substantially entirely cover the lead,
the silver or silver-alloy substantially entirely covers the lead, and
in the second area, the nickel or nickel-alloy coating, the palladium or palladium-alloy coating, the silver or silver-alloy, and the gold or gold-alloy are applied in the stated order.
12. The semiconductor light-emitting device of claim 1 , wherein in the inner part of the lead, the first area extends from a position on which the semiconductor light-emitting element is mounted to at least a position where the base and the cover come into contact with each other.
13. The semiconductor light-emitting device of claim 6 , wherein in the inner part of the lead, the first area extends from a position on which the semiconductor light-emitting element is mounted to at least a position where the base and the cover come into contact with each other.