VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING HIGH ASPECT RATIO PARTICLES
A composition of voltage switchable dielectric (VSD) material that utilizes semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material.
1 . A composition comprising:
a mixture comprising a resin and semiconducting organic material dispersed in the resin;
conductive material dispersed in the mixture; and
wherein the conductive material and the mixture combine to provide the composition with a characteristic of being (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of the voltage exceeding the characteristic voltage level.
2 . The composition of claim 1 , wherein the semiconducting organic material is solvent soluble and dispersed to covalently bond to molecules of the resin.
3 . The composition of claim 1 , wherein the semiconducting organic material has an off-state resistance that is greater than 1 Megaohm.
4 . The composition of claim 1 , further comprising a concentration of semiconducting oxide particle fillers.
5 . The composition of claim 4 , wherein the concentration of semiconducting oxide particle fillers include antimony tin oxide (ATO) particles.
6 . The composition of claim 4 , wherein the concentration of semiconducting oxide particle fillers include zinc oxide.
7 . The composition of claim 1 , wherein the semiconducting organic material includes 2-Amino-4,5-imidazole dicarbonitrile.
8 . The composition of claim 1 , wherein the semiconducting organic material includes Tetracyanoquinodimethane.
9 . The composition of claim 1 , wherein the conductive material comprises a concentration of nickel particles.
10 . The composition of claim 1 , wherein the semiconducting organic material includes Tetracyanoquinodimethane or 2-Amino-4,5-imidazole dicarbonitrile, and wherein the conductive material comprises a concentration of nickel particles.
11 . The composition of claim 10 , further comprising a concentration of semiconducting oxide particle fillers.
12 . The composition of claim 1 , wherein the resin is comprised of a mixture of polymers.