Semiconductor device with first and second semiconductor substrates
A semiconductor device includes a first semiconductor substrate including a first integrated circuit, a second semiconductor substrate mounted over the first semiconductor substrate, the second semiconductor substrate including a second integrated circuit, a post made of an inorganic substance and formed over the first semiconductor substrate, an adhesive layer made of an organic substance arranged between the first and the second semiconductor substrates, and a substrate-through-via made of an electrical conductor extending through the second semiconductor substrate and the post, the substrate-through-via extending to the first semiconductor substrate.
1. A semiconductor device comprising:
a first semiconductor substrate including a first integrated circuit, a wiring layer is formed on a part of the first semiconductor substrate;
a second semiconductor substrate mounted over the first semiconductor substrate, the second semiconductor substrate including a second integrated circuit;
a post made of an inorganic substance and formed on a part of the wiring layer and a part of the first semiconductor substrate;
an adhesive layer made of an organic substance arranged between the first and the second semiconductor substrates, the adhesive layer covers the post;
a via made of an electrical conductor that penetrates through the second semiconductor substrate, the adhesive layer and the post, and reaches the wiring layer; and
wherein the inorganic substance is silicon oxide or silicon nitride.
2. The semiconductor device according to claim 1 , wherein the adhesive layer is arranged between the post and the second semiconductor substrate.
3. The semiconductor device according to claim 1 , wherein a thermal expansion coefficient of the inorganic substance is in a range of between 2 ppm/° C. and 18 ppm/° C.
4. The semiconductor device according to claim 1 , wherein the electrical conductor is cupper, tungsten or silicon.