METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
A method of manufacturing semiconductor devices by cleaving a semiconductor wafer along a crystal orientation of the semiconductor wafer includes forming a semiconductor layer on the semiconductor wafer, forming an insulating film on the semiconductor layer such that the insulating film includes an insulating film thinned region extending parallel to the crystal orientation and that is thinner than other regions of the insulating film, forming an electrode on the insulating film and that crosses the insulating film thinned region, forming a cut in the insulating film thinned region, the cut serving as a starting point for cleaving, and cleaving the semiconductor wafer such that cleaving starts at the cut and propagates along the insulating film thinned region.
1 . A method of manufacturing semiconductor devices by cleaving a semiconductor wafer along a crystal orientation of said semiconductor wafer, comprising:
forming a semiconductor layer on said semiconductor wafer;
forming an insulating film on said semiconductor layer such that said insulating film includes an insulating film thinned region extending parallel to the crystal orientation and that is thinner than other regions of said insulating film;
forming an electrode on said insulating film such that said electrode crosses said insulating film thinned region;
forming a cut in said insulating film thinned region, said cut serving as a starting point for cleaving; and
cleaving said semiconductor wafer such that cleaving starts at said cut and propagates along said insulating film thinned region.
2 . The method according to claim 1 , wherein:
said electrode has a narrow portion, narrower than other portions of said electrode;
said narrow portion crosses said insulating film thinned region; and
length of said narrow portion in the direction in which said electrode extends is greater than width of said insulating film thinned region.
3 . A method of manufacturing semiconductor devices by cleaving a semiconductor wafer along a crystal orientation of said semiconductor wafer, comprising:
forming a semiconductor layer on said semiconductor wafer;
forming an insulating film on said semiconductor layer such that a series of spaced insulating film removed regions in which said insulating film is absent are located on said semiconductor layer in a direction parallel to the crystal orientation;
forming an electrode on said insulating film such that said electrode crosses the direction along which said series of insulating film removed regions are located;
forming a cut in one of said insulating film removed regions, said cut serving as a starting point for cleaving; and
cleaving said semiconductor wafer such that cleaving starts at said cut and propagates along said series of insulating film removed regions.