Methods of forming material over a substrate and methods of forming capacitors
A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
1. A method of forming a material over a substrate comprising performing at least one iteration of the following temporally separated ALD-type sequence:
contacting an outermost surface of a substrate with a first precursor to chemisorb a first species onto the outermost surface from the first precursor;
contacting the outermost surface with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor, the first and second precursors comprising ligands and having different central atoms, at least one of the first and second precursors comprising at least two different composition ligands, the two different composition ligands being polyatomic or a lone halogen; and
contacting the chemisorbed first species and the chemisorbed second species with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
2. The method of claim 1 wherein only one of the first and second precursors comprises at least two different composition ligands.
3. The method of claim 1 wherein the material comprises Zr x Al y O z , one of the first or second precursors is tri(dimethylamino)cyclopentadienyl zirconium, the other of the first and second precursors is trimethyl aluminum, and the reactant comprises oxygen.
4. The method of claim 3 wherein the one is the first precursor and x is greater than y.
5. The method of claim 3 wherein the one is the second precursor and y is greater than x.
6. The method of claim 1 wherein the material comprises Zr x Si y O z , one of the first or second precursors is tri(dimethylamino)cyclopentadienyl zirconium, the other of the first and second precursors is tri(dimethylamino)silane, and the reactant comprises oxygen.
7. The method of claim 6 wherein the one is the first precursor and x is greater than y.
8. The method of claim 6 wherein the one is the second precursor and y is greater than x.
9. A method of forming a material over a substrate comprising performing at least one iteration of the following temporally separated ALD-type sequence:
contacting an outermost surface of a substrate with a first precursor to chemisorb a first species onto the outermost surface from the first precursor, the first precursor comprising a central atom and at least two different composition ligands, the two different composition ligands being polyatomic or a lone halogen;
contacting the outermost surface with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor, the second precursor comprising a central atom and ligands, the central atoms of the first and second precursors being different; and
contacting the chemisorbed first species and the chemisorbed second species with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
10. The method of claim 9 wherein all of the ligands of the second precursor are of the same composition.
11. The method of claim 9 wherein all of the ligands of the first precursor are of only two different compositions.
12. The method of claim 11 wherein the first species is void of one of the two different composition ligands.
13. The method of claim 11 wherein the first precursor has greater quantity of one of the two different composition ligands than the other of the two different composition ligands.
14. The method of claim 13 wherein the first species is void of the one ligand.
15. The method of claim 9 wherein the ligands of the first precursor are of more than two different compositions.
16. The method of claim 9 wherein one of the ligands in the first precursor is larger than each ligand in the second precursor.
17. The method of claim 9 wherein one of the different composition ligands in the first precursor is larger than all remaining ligands in the first precursor of different composition from the one, the first species comprising more of the one ligand than any of the remaining ligands.
18. The method of claim 17 wherein the first species is void of the remaining ligands.
19. The method of claim 18 wherein all of the ligands of the first precursor are of only two different compositions.
20. The method of claim 9 wherein at least one of the different composition ligands is a lone halogen.
21. The method of claim 20 wherein at least two of the different composition ligands are different lone halogens.
22. The method of claim 9 wherein at least one of the different composition ligands is polyatomic.
23. The method of claim 22 wherein the one is selected from the group consisting of alkyl, allyl, and alkoxy.
24. The method of claim 22 wherein the one is selected from the group consisting of amino, amido, and imido.
25. The method of claim 22 wherein the one is cyclic.
26. The method of claim 22 wherein at least two of the different composition ligands are polyatomic.
27. The method of claim 26 wherein none of the different compositions is a lone halogen.
28. The method of claim 9 wherein the first species retains only a single ligand from the first precursor, the single ligand being polyatomic and larger than all individual ligands of the second precursor.
29. The method of claim 28 wherein all individual ligands of the second precursor are smaller than the single polyatomic ligand.
30. The method of claim 29 wherein the single polyatomic ligand is cyclic.
31. The method of claim 9 :
wherein one of the ligands in the first precursor is larger than each ligand in the second precursor, the first species comprising the one ligand;
using steric hindrance in forming the first species from the first precursor to reduce saturation of the central atom of the first precursor chemisorbed to the outermost surface than would otherwise occur under identical process conditions using a different first precursor not having said one ligand; and
the forming of the second species from the second precursor increasing quantity of the central atom of the second precursor chemisorbed to the outermost surface than would otherwise occur when forming the first species under said identical process conditions using a different first precursor not having said one ligand.
32. The method of claim 31 wherein the first species retains only a single ligand from the first precursor, the single ligand being cyclic.
33. The method of claim 31 wherein all of the ligands of the second precursor are of the same composition and are not cyclic.
34. A method of forming a material over a substrate comprising performing at least one iteration of the following temporally separated ALD-type sequence:
contacting an outermost surface of a substrate with a first precursor to chemisorb a first species onto the outermost surface from the first precursor, the first precursor comprising a central atom and ligands;
contacting the outermost surface with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor, the second precursor comprising a central atom and at least two different composition ligands, the two different composition ligands being polyatomic or a lone halogen, the central atoms of the first and second precursors being different; and
contacting the chemisorbed first species and the chemisorbed second species with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
35. A method of forming a material over a substrate comprising performing at least one iteration of the following temporally separated ALD-type sequence:
contacting an outermost surface of a substrate with a first precursor to chemisorb a first species onto the outermost surface from the first precursor, the first precursor comprising a central atom and at least two different composition ligands, the two different composition ligands of the first precursor being polyatomic or a lone halogen;
contacting the outermost surface with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor, the second precursor comprising a central atom and at least two different composition ligands, the two different composition ligands of the second precursor being polyatomic or a lone halogen, the central atoms of the first and second precursors being different; and
contacting the chemisorbed first species and the chemisorbed second species with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
36. A method of forming a capacitor, comprising:
forming first and second capacitor electrodes over a substrate; and
providing a capacitor dielectric between the first and second capacitor electrodes, the providing of the capacitor dielectric comprising performing multiple iterations of the following temporally separated ALD-type sequence:
contacting an outermost surface of the substrate with a first precursor to chemisorb a first species onto the outermost surface from the first precursor;
contacting the outermost surface with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor, the first and second precursors comprising ligands and having different central atoms, at least one of the first and second precursors comprising at least two different composition ligands, the two different composition ligands being polyatomic or a lone halogen; and
contacting the chemisorbed first species and the chemisorbed second species with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.
37. A method of forming a capacitor, comprising:
forming first and second capacitor electrodes and a capacitor dielectric there-between over a substrate, the forming of at least one of the first and second capacitor electrodes comprising performing multiple iterations of the following temporally separated ALD-type sequence:
contacting an outermost surface of the substrate with a first precursor to chemisorb a first species onto the outermost surface from the first precursor;
contacting the outermost surface with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor, the first and second precursors comprising ligands and having different central atoms, at least one of the first and second precursors comprising at least two different composition ligands, the two different composition ligands being polyatomic or a lone halogen; and
contacting the chemisorbed first species and the chemisorbed second species with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.