Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing
Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (“InGaN”)/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall.
1. A light emitting diode, comprising:
a support material;
a semiconductor material connected to the support material, the semiconductor material having
a bottom surface toward the support material,
a top surface facing away from the support material,
a sidewall extending along at least a portion of a semi-polar crystal plane of the semiconductor material, and
a slot extending through the semiconductor material from the top surface toward the support material;
an active region in direct contact with the sidewall; and
a conductive material within the slot.
2. The light emitting diode of claim 1 wherein the semiconductor material includes gallium nitride (GaN).
3. The light emitting diode of claim 1 wherein:
the semiconductor material is a first semiconductor material;
the light emitting diode further comprises a second semiconductor material connected to the support material, the second semiconductor material having
a bottom surface facing toward the support material,
a top surface facing away from the support material, and
a sidewall extending along at least a portion of a semi-polar crystal plane of the second semiconductor material;
the sidewall of the second semiconductor material is at east generally parallel to the sidewall of the first semiconductor material; and
the active region is between the sidewalls of the first and second semiconductor materials.
4. The light emitting diode of claim 3 wherein the top surface of the first semiconductor material and the top surface of the second semiconductor material are at least generally coplanar.
5. The light emitting diode of claim 3 wherein:
the support material has a support surface facing toward the first and second semiconductor materials; and
the top surface of the first semiconductor material and the top surface of the second semiconductor material are within a common plane at least generally parallel to the support surface.
6. The light emitting diode of claim 3 wherein:
the support material has a support surface facing toward the first and second semiconductor materials; and
the light emitting diode further comprises a foundation between the support surface and the active region.
7. The light emitting diode of claim 6 wherein:
the first semiconductor material is directly connected to the support material at a first region of the support surface;
the foundation is directly connected to the support material at a second region of the support surface; and
the first and second regions of the support surface are adjacent to one another.
8. The light emitting diode of claim 7 wherein the conductive material is directly connected to the support material at the first region.
9. The light emitting diode of claim 3 wherein:
the slot is a first slot;
the conductive material is a first conductive material;
the second semiconductor material includes a second slot extending through the second semiconductor material from the top surface of the second semiconductor material toward the support material; and
the light emitting diode further comprises a second conductive material within the second slot.
10. The light emitting diode of claim 9 wherein:
the first slot is at least generally parallel to a polar axis of the first semiconductor material; and
the second slot is at least generally parallel to a polar axis of the second semiconductor material.
11. The light emitting diode of claim 9 wherein:
the support material has a support surface facing toward the first and second semiconductor materials; and
the light emitting diode further comprises a foundation between the support surface and the second semiconductor material.
12. The light emitting diode of claim 11 wherein:
the first semiconductor material is directly connected to the support material at a first region of the support surface;
the foundation is directly connected to the support material at a second region of the support surface; and
the first and second regions of the support surface are adjacent to one another.
13. The light emitting diode of claim 12 wherein:
the first conductive material is directly connected to the support material at the first region; and
the second conductive material is directly connected to the foundation.
14. The light emitting diode of claim 1 wherein the semi-polar crystal plane has a Miller index of (10 1 3 ).
15. The light emitting diode of claim 1 wherein the semi-polar crystal plane has a Miller index of (10 1 1).
16. The light emitting diode of claim 1 wherein the semi-polar crystal plane has a Miller index of (11 2 2).
17. The light emitting diode of claim 1 , further comprising first and second foundations on the support material, wherein:
the first foundation is laterally spaced apart from the second foundation by an open region, and
the semiconductor material is at least partially within the open region.
18. The light emitting diode of claim 17 wherein the first foundation is between the active region and the support material.
19. A light emitting diode, comprising:
a support material having a support surface;
a semiconductor material on the support surface, the
semiconductor material having
a semiconductor surface spaced apart from the support surface,
a semi-polar crystal plane a between the semiconductor surface and the support surface, and
a slot extending between the semiconductor surface and the support surface;
an active region in direct contact with the semi-polar crystal plane: and
a conductive material within the slot.
20. The light emitting diode of claim 19 wherein:
the semiconductor material includes a GaN material; and
the semi-polar crystal plane of the semiconductor material has a Miller index of (10 1 3 ), (10 1 1), or(11 2 2).
21. The light emitting diode of claim 19 wherein:
the semiconductor material includes an N-type GaN material; and
the semi-polar crystal plane of the semiconductor material has a Miller index of (10 1 3 ), (10 1 1), or(11 2 2).
22. The light emitting diode of claim 19 wherein:
the semiconductor material includes an N-type GaN material;
the semi-polar crystal plane of the semiconductor material has a Miller index of (10 1 3 ), (10 1 1), or (11 2 2); and
the active region includes InGaN/GaN MQW in direct contact with the semi-polar plane of the N-type GaN material.
23. The light emitting diode of claim 19 wherein:
the semiconductor material includes an N-type GaN material having a plurality of gallium (Ga) and nitrogen (N) layers alternatively stacked along an axis;
the semi-polar crystal plane of the semiconductor material includes a plane canted relative to the axis; and
the active region includes InGaN/GaN MQW in direct contact with the semi-polar plane of the N-type GaN material.
24. The light emitting diode of claim 19 wherein:
the semiconductor material includes an N-type GaN material having a plurality of Ga and N layers alternately stacked along an axis;
the semi-polar crystal plane of the semiconductor material includes a plane that forms an angle with the axis, the angle being greater than 0° but less than 90° ; and
the active region includes InGaN/GaN MQW in direct contact with the semi-polar plane of the N-type GaN material.
25. The light emitting diode of claim 19 wherein:
the semiconductor material includes an N-type GaN material having a plurality of Ga and N layers alternately stacked along an axis;
the semi-polar crystal plane is a first semi-polar plane that forms an angle with the axis, the angle being greater than 0° but less than 90° ; and
the light emitting diode further includes second, third, fourth, fifth, and sixth semi-polar planes joined with one another and located between the semiconductor surface and the support surface of the support material, each of the second, third, fourth, fifth, and sixth semi-polar planes forms an angle that is greater than 0° but less than 90° relative to the axis.
26. The light emitting diode of claim 19 wherein:
the semiconductor material includes an N-type GaN material having a plurality of Ga and N layers alternately stacked along an axis;
the semi-polar crystal plane is a first semi-polar plane that forms an angle with the axis, the angle being greater than 0° but less than 90° ;
the light emitting diode further includes second, third, fourth, fifth, and sixth semi-polar planes joined with one another and located between the semiconductor surface and the support surface of the support material, each of the second, third, fourth, fifth, and sixth semi-polar planes forms an angle that is greater than 0° but less than 90° relative to the axis; and
the active region includes InGaN/GaN multi quantum well (MQW) in direct contact with the first through sixth semi-polar planes of the N-type GaN material.
27. A light emitting diode, comprising:
a support material having a support surface;
a semiconductor material in direct contact with the support material, the semiconductor material extending along a direction generally parallel to a polar axis of the semiconductor material, the semiconductor material including an N-type GaN material having
first and second sidewalls extending away from the support surface, the first and second sidewalls including semi-polar crystal planes of the N-type GaN material with Miller indices of (11 2 2) and (10 1 1), respectively,
a first semiconductor surface spaced apart from the support surface, the first semiconductor surface being at least generally planar;
a first slot extending between the first semiconductor surface and the support surface;
an active region in direct contact with the semiconductor material, the active region forming an angle of about 32° relative to the polar axis of the semiconductor material, the active region including an InGaN/GaN MQW;
first and second foundations on the support surface, the first foundation being laterally spaced apart from the second foundation by an open region, the first and second foundations individually having an at least generally cuboid shape, the N-type GaN material being at least partially within the open region;
a P-type GaN material spaced laterally apart from the N-type GaN material, the P-type GaN material having
a second semiconductor surface spaced apart from the support surface, the second semiconductor surface being at least generally planar; and
a second slot extending between the second semiconductor surface and the support surface;
a first contact in the first slot of the N-type GaN material; and
a second contact in the second slot of the P-type GaN material.
28. A light emitting diode, comprising:
a support material having a support surface;
a semiconductor material in direct contact with the support material, the semiconductor material having
an N-type GaN material,
a polar axis, the semiconductor material extending from the support material along a direction generally parallel to the polar axis,
first and second sidewalls extending away from the support surface, the first and second sidewalls including semi-polar crystal planes with Miller indices of (11 2 2) and (10 1 1), respectively,
a top surface spaced apart from the support surface, and
a slot extending between the top surface and the support surface;
an active region in direct contact with the semiconductor material, the active region forming an angle greater than 0° and less than 90° relative to the polar axis; and
a conductive material within the slot.