Positive resist composition and method of forming resist pattern

1. A positive resist composition comprising a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid, an acid-generator component (B) which generates acid upon exposure and a fluorine-containing compound component (F),

the base component (A) comprising a polymeric compound (A1) comprised of a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and

the fluorine-containing compound component (F) comprising a fluorine-containing polymeric compound (F1) comprised of a structural unit (f1) containing a base dissociable group:

wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; R 2 represents a divalent linking group; and R 3 represents a cyclic group containing an —SO 2 — group within the ring skeleton thereof.

2. The positive resist composition according to claim 1 , wherein the structural unit (f1) is represented by general formula (f1-0) shown below:

wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Q 0 represents a single bond or a divalent linking group which may have a fluorine atom; and R 0 represents an organic group which may have a fluorine atom.

3. The positive resist composition according to claim 2 , wherein the structural unit (f1) is a structural unit represented by general formula (f1-01) shown below or a structural unit represented by general formula (f1-02) shown below:

wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Q 01 represents a divalent linking group having no fluorine atom; and R 1 represents an organic group having a fluorine atom,

wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Q 02 represents a divalent linking group having a fluorine atom; and R 0 represents an organic group which may have a fluorine atom.

4. The positive resist composition according to claim 3 , wherein the structural unit represented by general formula (f1-01) is at least one structural unit selected from the group consisting of a structural unit represented by general formula (f1-01-1) shown below and a structural unit represented by general formula (f1-01-2) shown below:

wherein each R independently represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and each R 1 independently represents an organic group having a fluorine atom; X represents a divalent organic group, A aryl represents a divalent aromatic cyclic group which may have a substituent, and X 01 represents a single bond or a divalent linking group, provided that each of X, A aryl and X 01 has no fluorine atom.

5. The positive resist composition according to claim 3 , wherein the structural unit represented by general formula (f1-02) is at least one structural unit selected from the group consisting of a structural unit represented by general formula (f1-02-1) shown below and a structural unit represented by general formula (f1-02-2) shown below:

wherein each R independently represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each Q 1 independently represents a group containing —O—, —CH 2 —O— or —C(═O)—O—; each R q1 independently represents a fluorine atom or a fluorinated alkyl group; R 01 represents an organic group having a fluorine atom; and R 01 , represents an alkyl group.

6. The positive resist composition according to claim 1 , wherein R 3 in general formula (a0-1) represents a cyclic group containing —O—SO 2 — within the ring skeleton thereof.

7. The positive resist composition according to claim 6 , wherein R 3 in general formula (a0-1) is a cyclic group represented by general formula (3-1) shown below:

wherein A′ represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; p represents an integer of 0 to 2; and R 8 represents an alkyl group, an alkoxy group, a halogenated alkyl group, a hydroxyl group, —COOR″, —OC(═O)R″, a hydroxyalkyl group or a cyano group, wherein R″ represents a hydrogen atom or an alkyl group.

8. The positive resist composition according to claim 1 , wherein the polymeric compound (A1) further comprises a structural unit (a3) derived from an acrylate ester containing a polar group-containing aliphatic hydrocarbon group.

9. The positive resist composition according to claim 1 , which further comprises a nitrogen-containing organic compound (D).

10. A method of forming a resist pattern, comprising: forming a resist film using a positive resist composition of claim 1 ; conducting exposure of said resist film; and alkali-developing said resist film to form a resist pattern.