IP Library Granted Patent US 8,303,789
Granted Patent B1
US 8,303,789 · App. 12/721,860 · Granted Nov 6, 2012

Control of electrolyte solution in nanofluidic channels

Assignee: STC.UNM
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Quick Facts
Patent No.
US 8,303,789
App. No.
12/721,860
Granted
Nov 6, 2012
Kind
B1
Abstract

Various embodiments provide an exemplary lab-on-a-chip (LOC) system that serves as an analytical tool and/or as a separation medium for an electrolyte solution including various charged molecular species. The LOC system can include an integrated nanofluidic FET device in combination with suitable analysis systems. By applying and controlling a longitudinal electric field and a transverse electric potential, the flow and the pH of the electrolyte solution in the nanofluidic channels can be controlled.

Claims (41)

1. A method for controlling an electrolyte solution in a nanofluidic channel comprising:

providing a plurality of nanofluidic channels in a substrate, wherein each nanofluidic channel comprises an insulating surface layer such that an electrolyte solution in the nanofluidic channel is insulated from the substrate;

configuring a multi-gate nanofluidic field-effect-transistor (FET) having a plurality of FET gates formed in the substrate, wherein the plurality of FET gates are spaced along a length direction of each nanofluidic channel with each FET gate surrounding the nanofluidic channel;

applying an electric potential V EO to a length of the electrolyte solution in each nanofluidic channel to generate an electroosmotic (EO) flow of the electrolyte solution along the nanofluidic channel; wherein the electrolyte solution comprises a plurality of charged species; and

applying a gate electric potential V G to each FET gate to generate a leakage current to change at least one of a direction of the EO flow and a speed of the EO flow.

2. The method of claim 1 , wherein the leakage current flows from each FET gate, through the insulating surface layer of the nanofluidic channel, and to the electrolyte solution in the nanofluidic channel.

3. The method of claim 1 , wherein the insulating surface layer comprises SiO 2 and wherein a leakage current density is larger in magnitude with a negative gate electric potential V G than with a positive gate electric potential V G .

4. The method of claim 1 further comprising:

applying a gate electric potential V G to accelerate the EO flow; and

continuing the application of the gate electric potential V G to reverse a direction of the EO flow caused by the leakage current.

5. The method of claim 1 further comprising:

applying a gate electric potential V G to reverse the direction of the EO flow; and

continuing the application of the gate electric potential V G to generate a double-reversed EO flow caused by the leakage current.

6. The method of claim 1 , wherein the direction and the speed of the EO flow are maintained inconstantly over time after an initial reverse of EO flow upon applying the gate electric potential V G .

7. The method of claim 1 , wherein the change of the direction and the speed of the EO flow is independent of the position of the charged species with respect to the position of the FET gate.

8. The method of claim 1 , further comprising:

a first change of the pH value of the electrolyte solution upon applying the gate electric potential V G ; and

a second change of the pH value of the electrolyte solution by a prolonged application of the gate electric potential V G due to water electrolysis caused by the leakage current.

9. The method of claim 1 , further comprising:

increasing the pH value of the electrolyte solution upon applying a positive gate electric potential V G ;

decreasing the pH value of the electrolyte solution by a prolonged application of the positive gate electric potential VG due to water electrolysis caused by the leakage current;

decreasing the pH value of the electrolyte solution upon applying a negative gate electric potential V G ; and

increasing the pH value of the electrolyte solution by a prolonged application of the positive gate electric potential VG due to water electrolysis caused by the leakage current.

10. The method of claim 1 , wherein the pH of electrolyte solution ranges from about 4 to about 9 and shifts by a pH unit upon applying the gate electric potential V G .

11. The method of claim 1 further comprising measuring the pH value of the electrolyte solution using a calibration curve, wherein the calibration curve renders a relationship between an IR result of the charged species and the pH value of the electrolyte solution.

12. The method of claim 1 further comprising using a pH indicator to monitor the pH change of the electrolyte solution, wherein the pH indicator comprises a fluorescein monitored by IR absorbance.

13. The method of claim 1 further comprising isoelectrically focusing the plurality of charged species in the electrolyte solution in the nanofluidic channels by a controlled pH shift, wherein the charged species comprises proteins.

14. The method of claim 1 , further comprising applying the gate electric potential V G to each FET gate to generate the leakage current to further change a pH value of the electrolyte solution.

15. A method for controlling an electrolyte solution in a nanofluidic channel comprising:

providing a plurality of nanofluidic channels in a substrate, wherein each nanofluidic channel comprises an insulating surface layer such that an electrolyte solution in the nanofluidic channel is insulated from the substrate;

configuring a multi-gate nanofluidic field-effect-transistor (FET) having a plurality of FET gates formed in the substrate, wherein the plurality of FET gates are spaced along a length direction of each nanofluidic channel with each FET gate surrounding the nanofluidic channel;

applying an electric potential V EO to a length of the electrolyte solution in each nanofluidic channel to generate an electroosmotic (EO) flow of the electrolyte solution along the nanofluidic channel; wherein the electrolyte solution comprises a plurality of charged species; and

applying a gate electric potential VG to each FET gate to generate a leakage current to change at least one of a direction of the EO flow and a speed of the EO flow; wherein the leakage current flows from each FET gate, through the insulating surface layer of the nanofluidic channel, and to the electrolyte solution in the nanofluidic channel.

16. The method of claim 15 further comprising:

applying a gate electric potential V G to accelerate the EO flow or to reverse the direction of the EO flow; and

continuing the application of the gate electric potential V G to further reverse the direction of the EO flow caused by the leakage current.

17. The method of claim 15 , further comprising:

a first change of the pH value of the electrolyte solution upon applying the gate electric potential V G ; and

a second change of the pH value of the electrolyte solution by a prolonged application of the gate electric potential V G due to water electrolysis caused by the leakage current.

18. The method of claim 15 further comprising probing the charged species flowing in the nanofluidic channels using IR spectroscopy, wherein the IR spectroscopy comprises multiple internal reflection Fourier transform infrared spectroscopy (MIR-FTIRS).

19. The method of claim 15 , further comprising applying the gate electric potential VG to each FET gate to generate the leakage current to further change a pH value of the electrolyte solution.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2011
From: THE REGENTS OF THE UNIVERSITY OF NEW MEXICO C/O RESEARCH & TECHNOLOGY LAW
To: STC.UNM
Reel/Frame 026371/0863 →
CONFIRMATORY LICENSE Recorded Aug 5, 2010
From: UNIVERSITY OF NEW MEXICO ALBUQUERQUE
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 024792/0222 →
CONFIRMATORY LICENSE Recorded Aug 5, 2010
From: UNIVERSITY OF NEW MEXICO ALBUQUERQUE
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 024796/0034 →
Continuity (2)
Continuation In Part PCTUS2009061314 · Oct 20, 2009
Provisional Application 61106648 · Oct 20, 2008