Silicon-containing film-forming composition, silicon-containing film, and pattern forming method
A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R 1 represents a hydrogen atom or an electron-donating group, at least one R 1 is an electron-donating group, R 2 represents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein R 3 represents an alkyl group having 1 to 8 carbon atoms, and R 4 represents a monovalent organic group.
1. A silicon-containing film-forming composition comprising:
a polysiloxane comprising:
a first structural unit derived from a tetraalkoxysilane;
a second structural unit derived from a compound shown by formula (1a); and
a third structural unit derived from a compound shown by formula (2); and
an organic solvent,
wherein an amount of the second structural unit in the polysiloxane is from 1 to 20 parts by mol with respect to 100 parts by mol of the first structural unit, and an amount of the third structural unit in the polysiloxane is from 10 to 50 parts by mol with respect to 100 parts by mol of the first structural unit,
wherein R 1 represents a hydrogen atom or an electron-donating group, at least one R 1 is an electron-donating group, and R 2 represents a monovalent organic group,
R 3 —Si(OR 4 ) 3 (2)
wherein R 3 represents an alkyl group having 1 to 8 carbon atoms, and R 4 represents a monovalent organic group.
2. The silicon-containing film-forming composition according to claim 1 , wherein the electron-donating group in the formula (1a) comprises at least one of an alkyl group having 1 to 4 carbon atoms, a hydroxyl group, a methoxy group, a phenoxy group, an amino group, a dimethylamino group, and an acetylamino group.
3. The silicon-containing film-forming composition according to claim 2 , wherein the polystyrene-reduced weight average molecular weight of the polysiloxane determined by gel permeation column chromatography is about 500 to about 15,000.
4. A pattern forming method comprising:
applying the silicon-containing film-forming composition according to claim 2 to a substrate to form a silicon-containing film;
applying a resist composition to the silicon-containing film to form a resist film;
exposing the resist film to radiation through a photomask;
developing the exposed resist film to form a resist pattern; and
dry-etching the silicon-containing film and the substrate using the resist pattern as a mask to form a pattern.
5. The silicon-containing film-forming composition according to claim 1 , wherein the second structural unit is derived from a compound shown by formula (1-1),
wherein R 5 represents an alkyl group having 1 to 4 carbon atoms, and R 6 represents a monovalent organic group.
6. A pattern forming method comprising:
applying the silicon-containing film-forming composition according to claim 5 to a substrate to form a silicon-containing film;
applying a resist composition to the silicon-containing film to form a resist film;
exposing the resist film to radiation through a photomask;
developing the exposed resist film to form a resist pattern; and
dry-etching the silicon-containing film and the substrate using the resist pattern as a mask to form a pattern.
7. The silicon-containing film-forming composition according to claim 1 , wherein the polystyrene-reduced weight average molecular weight of the polysiloxane determined by gel permeation column chromatography is about 500 to about 15,000.
8. The silicon-containing film-forming composition according to claim 1 , wherein the organic solvent comprises at least one of ether solvents and ester solvents.
9. The silicon-containing film-forming composition according to claim 1 , wherein the silicon-containing film-forming composition comprises a structure to be used for a multilayer resist process.
10. A pattern forming method comprising:
applying the silicon-containing film-forming composition according to claim 1 to a substrate to form a silicon-containing film;
applying a resist composition to the silicon-containing film to form a resist film;
exposing the resist film to radiation through a photomask;
developing the exposed resist film to form a resist pattern; and
dry-etching the silicon-containing film and the substrate using the resist pattern as a mask to form a pattern.
11. A method of producing a silicon-containing film comprising:
coating the silicon-containing film-forming composition according to claim 1 on a surface of a substrate; and
heating the coated silicon-containing film-forming composition.
12. The silicon-containing film-forming composition according to claim 1 , wherein the polysiloxane further comprises a fourth structural unit derived from a compound shown by formula (3),
wherein R 7 represents a monovalent organic group, R 8 represents a linear or branched alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 4.
13. The silicon-containing film-forming composition according to claim 12 , wherein an amount of the fourth structural unit in the polysiloxane is from 1 to 30 parts by mol with respect to 100 parts by mol of the first structural unit.
14. The silicon-containing film-forming composition according to claim 1 , wherein an amount of the second structural unit in the polysiloxane is from 5 to 15 parts by mol with respect to 100 parts by mol of the first structural unit.
15. The silicon-containing film-forming composition according to claim 1 , wherein an amount of the third structural unit in the polysiloxane is from 20 to 40 parts by mol with respect to 100 parts by mol of the first structural unit.