SEMICONDUCTOR IMAGE DEVICE
A line sensor includes a second conductive type semiconductor substrate where a first conductive type well region is formed, a pixel line formed in the well region, a plurality of pixels being formed on the well region, the plurality of pixels generating charges corresponding to an incident light, a CCD register unit formed on the well region, a transfer electrode being arranged on the well region, the transfer electrode transferring the charges in response to a transfer clock, an output circuit which outputs a voltage signal corresponding to the charges transferred by the transfer electrode, a wiring part which supplies a reference potential to the well region and the output circuit, and a resistor which is included in a wiring, the wiring connecting a first contact between the well region and the wiring part to a second contact between the output circuit and the wiring part.
1 . A semiconductor image device comprising:
a second conductive type semiconductor substrate where a first conductive type well region is formed;
a pixel arranged region formed in the well region, a plurality of pixels being formed on the well region, the plurality of pixels generating charges corresponding to an incident light;
a transfer electrode arranged region formed on the well region, a transfer electrode being arranged on the well region, the transfer electrode transferring the charges in response to a transfer clock;
an output circuit which outputs a voltage signal corresponding to the charges transferred by the transfer electrode;
a wiring part which supplies a reference potential to the well region and the output circuit; and
a resistor which is included in a wiring, the wiring connecting a first contact between the well region and the wiring part to a second contact between the output circuit and the wiring part.
2 . The semiconductor image device according to claim 1 , wherein the resistor is an impurity diffusion region formed by diffusing impurities into the well region.
3 . The semiconductor image device according to claim 1 , wherein the wiring part includes a part extended along a transfer direction of the charges in the transfer electrode arranged region.
4 . The semiconductor image device according to claim 2 , wherein the wiring part includes a part extended along a transfer direction of the charges in the transfer electrode arranged region.
5 . The semiconductor image device according to claim 1 , wherein the wiring part comprising:
a first electrode pad which corresponds to the well region;
a second electrode pad which corresponds to the output circuit; and
a connecting wiring which connects the first electrode pad with the second electrode pad.
6 . The semiconductor image device according to claim 2 , wherein the wiring part comprising:
a first electrode pad which corresponds to the well region;
a second electrode pad which corresponds to the output circuit; and
a connecting wiring which connects the first electrode pad with the second electrode pad.
7 . The semiconductor image device according to claim 3 , wherein the wiring part comprising:
a first electrode pad which corresponds to the well region;
a second electrode pad which corresponds to the output circuit; and
a connecting wiring which connects the first electrode pad with the second electrode pad.
8 . The semiconductor image device according to claim 5 , wherein the connecting wiring is extended along a transfer direction of the charges of the transfer electrode arranged region, the first electrode pad is formed at one end side of the connecting wiring, and the second electrode pad is formed at the other end side of the connecting wiring.
9 . The semiconductor image device according to claim 8 , further comprising a first opposite wiring which connects to the semiconductor substrate and is arranged opposite to the connecting wiring in a width direction of the semiconductor substrate.
10 . The semiconductor image device according to claim 9 , further comprising a second opposite wiring which connects to the connecting wiring and is arranged opposite to the first opposite wiring.
11 . The semiconductor image device according to claim 10 , wherein the first opposite wiring and the second opposite wiring are extended along the transfer direction of the charger in the transfer electrode arranged region.
12 . The semiconductor image device according to claim 1 , wherein the output circuit includes a transistor formed in the well region formed on the semiconductor substrate.
13 . The semiconductor image device according to claim 12 , wherein a contact of the wiring part to the output circuit is a contact of the wiring part to the well region where the transistor is formed.
14 . The semiconductor image device according to claim 12 , wherein the well region where the transistor is formed is common to the well region where the plurality of pixels are formed.
15 . The semiconductor image device according to claim 13 , wherein the well region where the transistor is formed is common to the well region where the plurality of pixels are formed.