THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
A semiconductor circuit structure includes a support substrate which carries an interconnect region and electronic circuitry. The semiconductor circuit structure includes a device substrate coupled to the interconnect region through a conductive bonding layer. The device substrate includes a planarized surface which faces the conductive bonding layer. The device substrate can carry laterally oriented semiconductor devices which are connected to the electronic circuitry carried by the support substrate. The device substrate can be processed to form vertically oriented semiconductor devices which are connected, through the interconnect region and conductive bonding layer, to the electronic circuitry carried by the support substrate.
1 . A method, comprising:
providing a first substrate which carries a circuit and interconnect region; and
coupling a second substrate to the interconnect region through a conductive bonding layer, wherein the second substrate includes first and second portions and a detach layer.
2 . The method of claim 1 , further including planarizing an exposed surface of the interconnect region.
3 . The method of claim 1 , wherein the coupling step includes forming the conductive bonding layer proximate to an exposed surface of the interconnect region.
4 . The method of claim 1 , further including removing the first portion of the second substrate so the first portion is coupled to the interconnect region through the conductive bonding layer.
5 . The method of claim 4 , further including planarizing an exposed surface of the second portion of the second substrate.
6 . The method of claim 4 , further including forming a circuit carried by the second portion of the second substrate.
7 . The method of claim 6 , further including forming an interconnect region carried by the second portion of the second substrate.
8 . The method of claim 5 , further including forming a circuit proximate to the planarized surface.
9 . The method of claim 8 , further including forming an interconnect region proximate to the planarized surface.
10 . The method of claim 1 , further including planarizing an exposed surface of the second portion of the second substrate.
11 . The method of claim 10 , wherein the coupling step includes forming a bonding interface proximate to the planarized surface.
12 . The method of claim 1 , further including removing a portion of the conductive contact region.
13 . The method of claim 12 , further including forming a dielectric material region in the space occupied by the portion of the conductive contact region that was removed.
14 . The method of claim 12 , further including forming a via which connects the first and second interconnect regions together.
15 . The method of claim 14 , wherein the via extends through the space occupied by the portion of the conductive contact region that was removed.
16 . The method of claim 1 , wherein the second portion includes a stack of semiconductor layers.
17 . The method of claim 1 , wherein the second portion includes a stack of crystalline semiconductor layers.
18 . The method of claim 1 , wherein the second portion includes a stack of single crystalline semiconductor layers.
19 . The method of claim 1 , wherein the second portion includes a stack of blanket layers of semiconductor material.