Method of determining the particle sensitivity of electronic components
To analyze an electronic component, this component is exposed to a focused laser beam. The information provided by the laser mapping relating to the position and to the depth of the sensitivity zones of the component is used as input parameter in prediction codes for quantifying the sensitivity of the mapped component to ionizing particles in the natural radioactive environment. The prediction codes are used to determine the occurrence of malfunctions in the electronic component. Determination of the risks associated with the radiative environment imposes two aspects: one, probabilistic, takes into account the particle/matter interaction and the other, electrical, takes into account the charge collection inside the electronic component.
1. A method for characterising the sensitivity to energy interactions of an electronic component, comprising:
the electronic component is put into operation,
the electronic component thus put into operation is excited by excitations produced by a laser radiation,
a malfunction of the electronic component Put into operation, corresponding to these excitations, is measured,
a mapping is made of the sensitivity zones of the component in which these excitations have an effect,
a program of simulation of stress applied by a particle prompting energy interactions is applied to the mapping of the sensitivity zones,
this simulation program produces a large number of possible paths taken by the particles in the component and, in the case of a neutrons and protons, a large number of reactions extracted from a data base,
this simulation program implements a charge collection model from these possible paths and from the mapping of the sensitivity of the component,
this simulation program analyzes these charge collections and decides on the occurrence of errors related to these charge collections,
the quality signal of the component is deduced from this analysis and from these decisions.
a data base is used, in the case of the neutrons and the protons, providing information on products and probabilities of possible nuclear reactions, and
the effect of the ionization on the working of the components is measured.
2. The method of claim 1 , wherein
a processing is applied to the prepared laser mapping to extract a mapping, this mapping taking account of the sensitivity of the component to the ionizing particles.
3. The method of claim 2 , wherein
a mathematical deconvolution is performed to take into consideration a size of a laser impact relative to an estimated size of a zone of sensitivity of the component to ionizing particles.
4. The method of claim 3 , wherein
for components with fine integration, a maximum size of the zone of sensitivity of an elementary cell is measured with the laser mapping.
5. The method of claim 4 , wherein
to quantify the sensitivity of the component, a response is measured of the electronic component to excitations according to criteria determined for the dysfunction studied.
6. The method of claim 5 , wherein
the simulation program chooses nuclear reactions from a data base corresponding to the type and energy of the particle studied.
7. The method of claim 6 , wherein
as a measurement of energy interaction, interactions of heavy ions and/or of protons and/or of neutrons are measured by laser simulation.
8. The method of claim 7 , wherein
the energy of the laser photon of the laser source is greater than the value of the bandgap of the semiconductor component.
9. The method of claim 8 , wherein
the laser source prompts a simultaneous absorption of several photons in the semiconductor material.
10. The method of claim 9 , wherein
the laser mapping is done in all three dimensions of space.
11. The method of claim 10 , wherein
the laser mapping is done in four dimensions, the three dimensions of space as well as time.