Polishing composition
View Patent ↗The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH 2 .)
1. A polishing composition for polishing copper or copper alloy, comprising:
an oxidizing agent (A);
at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids;
a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms;
a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and
an N-substituted imidazole (E) represented by the following general formula (1):
(in the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH 2 ).
2. The polishing composition according to claim 1 , wherein the N-substituted imidazole is at least one selected from N-vinylimidazole, N-methylimidazole, N-ethylimidazole, N-benzylimidazole, 1,2-dimethylimidazole, N-butylimidazole, or N-(3-aminopropyl)-imidazole.
3. The polishing composition according to claim 1 , wherein a concentration of the N-substituted imidazole is 0.005 to 3 mass %.
4. The polishing composition according to claim 1 , further comprising an abrasive.
5. The polishing composition according to claim 1 , wherein pH thereof is 9 to 11.
6. The polishing composition according to claim 1 , further comprising ammonia.
7. The polishing composition according to claim 1 , wherein the oxidizing agent (A) is a persulfate.
8. The polishing composition according to claim 1 , wherein the at least one acid (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids is oxalic acid.
9. The polishing composition according to claim 1 , wherein the sulfonic acid (C) having an alkyl group of 8 or more carbon atoms is alkylbenzene sulfonic acid.
10. The polishing composition according to claim 1 , wherein the fatty acid (D) having an alkyl group of 8 or more carbon atoms is oleic acid or lauric acid.
11. The polishing composition according to claim 4 , wherein the abrasive is colloidal silica.
12. The polishing composition according to claim 1 , further comprising a nonionic water-soluble polymer.
13. A polishing method, wherein a metal film composed of copper or copper alloy embedded on an insulating layer which has concave portions and is provided on a substrate, so as to cover the concave portions, or a metal film composed of copper or copper alloy embedded, through a barrier metal film, on an insulating layer which has concave portions and is provided on a substrate, so as to cover the concave portions, is polished by using the polishing composition according to claim 1 .
14. The polishing method according to claim 13 , wherein the barrier metal film is composed of tantalum or tantalum alloy.
15. A composition providing the polishing composition according to claim 3 by dilution with water.
16. A kit comprising a plurality of types of compositions, which provide the polishing composition of claim 1 by mixing the plurality of types of compositions.
17. A method for producing a semiconductor device, comprising forming a wiring by the polishing method according to claim 13 .