Process for manufacturing a composite substrate
The invention relates to a process for manufacturing a composite substrate comprising bonding a first substrate onto a second semiconducting substrate, characterized in that the process includes, before bonding, the formation of a bonding layer between the first and the second substrate, the bonding layer comprising a plurality of islands distributed over a surface of the first substrate in a determined pattern and separated from one another by regions of a different type, which are distributed in a complementary pattern, wherein the islands are formed via a plasma treatment of the material of the first substrate.
1. A process for manufacturing a composite substrate comprising bonding a first substrate onto a second semiconducting substrate, the process further comprising, before bonding, the formation of a bonding layer between the first and the second substrate, the bonding layer comprising a plurality of islands distributed over a surface of the first substrate in a determined pattern and separated from one another by regions of a different type, which are distributed in a complementary pattern, wherein the islands are formed via a plasma treatment of a material of the first substrate, and wherein the plasma is of the O 2 or N 2 type, or a mixture thereof.
2. The process according to claim 1 , wherein the regions of a different type are made of a different material from that of the islands.
3. The process according to claim 1 , wherein the regions of a different type are empty.
4. The process according to claim 1 , further comprising, after bonding, a heat treatment, which is intended to intensify the bonding energy.
5. The process according to claim 1 , wherein the bonding is followed by debonding the second substrate and the first substrate.
6. The process according to claim 5 , wherein the debonding is carried out via chemical etching.
7. A process for manufacturing a composite substrate comprising bonding a first substrate onto a second semiconducting substrate, the process further comprising:
formation of a bonding layer between the first and the second substrate before bonding, the bonding layer comprising a plurality of islands distributed over a surface of the first substrate in a determined pattern and separated from one another by regions of a different type, which are distributed in a complementary pattern, wherein the islands are formed via a plasma treatment of a material of the first substrate;
formation of a mask on the surface of the first substrate in the complementary pattern, whereby the mask does not cover areas of the first substrate corresponding to the pattern; and
formation of the islands in the areas of the first substrate not covered by the mask.
8. The process according to claim 7 , wherein a mask removal process is carried out during or after formation of the islands in the areas of the first substrate not covered by the mask.
9. A process for manufacturing a composite substrate comprising bonding a first substrate onto a second semiconducting substrate, the process further comprising:
production of an embrittlement area in the second substrate so as to define a thin layer before bonding; and
formation of a bonding layer between the first and the second substrate before bonding, the bonding layer comprising a plurality of islands distributed over a surface of the first substrate in a determined pattern and separated from one another by regions of a different type, which are distributed in a complementary pattern, wherein the islands are formed via a plasma treatment of a material of the first substrate.
10. The process according to claim 9 , further comprising, after bonding, a remainder of the second substrate is detached along the embrittlement area, so that the thin layer is transferred onto the first substrate.
11. A process for manufacturing a composite substrate comprising bonding a first substrate onto a second semiconducting substrate in a molecular adhesion-bonding operation, the process further comprising forming of a bonding layer between the first and the second substrate before bonding, the bonding layer comprising a plurality of islands distributed over a surface of the first substrate in a determined pattern and separated from one another by regions of a different type, which are distributed in a complementary pattern, wherein the islands are formed via a plasma treatment of a material of the first substrate.
12. A process for manufacturing a composite substrate comprising bonding a first substrate onto a second semiconducting substrate, the process further comprising:
formation of a bonding layer between the first and the second substrate before bonding, the bonding layer comprising a plurality of islands distributed over a surface of the first substrate in a determined pattern and separated from one another by regions of a different type, which are distributed in a complementary pattern, wherein the islands are formed via a plasma treatment of a material of the first substrate;
bonding a thin layer onto a final support; and
debonding the second substrate from the first substrate.