Process for producing light absorbing layer in CIS based thin-film solar cell
A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T 1 for a time Δt 1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T 2 for a time Δt 2 . The temperature of the treatment object is then decreased to T 3 , and, at that temperature, the treatment object is held in a heated state for a time Δt 3 .
1. A process for producing a light absorbing layer in a CIS based thin-film solar cell, comprising:
a selenization process to make a treatment object containing any one of Cu/Ga, Cu/In, Cu—Ga alloy/In and Cu—In—Ga alloy as a metal precursor film into selenide in a preliminary thermal treatment process to hold the treatment object in atmosphere having a selenium source at a predetermined temperature; and
a two-stage sulfurization process to perform sulfurization of the selenide by increasing a temperature of the selenide after replacing the atmosphere having the selenium source with atmosphere having a sulfur source, the two-stage sulfurization process comprising a first sulfurization process for performing sulfurization by holding the treatment object for a certain time at a first thermal treatment temperature higher than the holding temperature of the preliminary thermal treatment process, and a second sulfurization process for performing sulfurization by holding the treatment object for a time longer than the holding time of the first thermal treatment at a second thermal treatment temperature lower than the first thermal treatment temperature.
2. The process for producing a light absorbing layer in a CIS based thin-film solar cell according to claim 1 ,
wherein the holding temperature of the first sulfurization process in the two-stage sulfurization process is 500 to 650° C. and the holding time is 5 to 120 minutes.
3. The process for producing a light absorbing layer in a CIS based thin-film solar cell according to claim 1 ,
wherein the holding temperature of the second sulfurization process in the two-stage sulfurization process is 480 to 600° C. and the holding time is 20 to 300 minutes.
4. The process for producing a light absorbing layer in a CIS based thin-film solar cell according to claim 1 ,
wherein the holding temperature in the preliminary thermal treatment process is 350 to 550° C. and the holding time is 10 to 240 minutes.
5. The process for producing a light absorbing layer in a CIS based thin-film solar cell according to claim 1 ,
wherein selenium and/or sulfur is contained in the metal precursor film.