RF power transistor circuit
View Patent ↗A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
1. A radio frequency (RF) power transistor circuit comprising:
a first power transistor having a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal;
a second power transistor having a control electrode coupled to the input terminal, a first current electrode coupled to the output terminal, and a second current electrode coupled to the power supply voltage terminal; and
a first decoupling circuit, comprising:
a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal and the control electrode of the second power transistor and the power supply voltage terminal, wherein
the first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency, and
the resonance is generated by an interaction between the first power transistor and the second power transistor.
2. The RF power transistor circuit of claim 1 , further comprising a second decoupling circuit, the second decoupling circuit comprising a second inductive element, a second resistor, and a second capacitor coupled together in series between the first current electrode of the first power transistor and the power supply voltage terminal and the first current electrode of the second power transistor and the power supply voltage terminal.
3. The RF power transistor circuit of claim 1 , wherein a resistance value of the first resistor is in a range of 0.5 ohms to 5 ohms.
4. The RF power transistor circuit of claim 1 , wherein a capacitance value of the first capacitor is in a range of 10 nano Farads to 1,000 nano Farads.
5. The RF power transistor circuit of claim 1 , wherein an inductance value of the first inductive element is in a range of 0.1 nano Henrys to 3 nano Henrys.
6. The RF power transistor circuit of claim 1 , wherein:
the first inductive element has a first terminal coupled to the control electrode of the first power transistor, and a second terminal;
the first resistor has a first terminal coupled to the second terminal of the first inductive element, and a second terminal;
the first capacitor has a first electrode coupled to the second terminal of the first resistor, and a second electrode coupled to the power supply voltage terminal; and
the RF power transistor circuit further comprising a second capacitor having a first electrode coupled to the first terminal of the first inductive element, and a second electrode coupled to the first electrode of the first capacitor.
7. The RF power transistor circuit of claim 6 , further comprising a second decoupling circuit, the second decoupling circuit comprising:
a second inductive element having a first terminal coupled to the first current electrode of the first power transistor, and a second terminal;
a second resistor having a first terminal coupled to the second terminal of the second inductive element, and a second terminal;
a third capacitor having a first electrode coupled to the second terminal of the second resistor, and a second electrode; and
a fourth capacitor having a first electrode coupled to the first terminal of the second inductive element, and a second electrode coupled to the first electrode of the third capacitor.
8. The RF power transistor circuit of claim 1 , further comprising an RF impedance matching network comprising:
a second inductive element having a first terminal coupled to the control electrode of the first power transistor, and a second terminal; and
a second capacitor having a first electrode coupled to the second terminal of the second inductive element, and a second electrode coupled to the power supply voltage terminal;
wherein the RF impedance matching network is for preventing a current at the first electrode of the second capacitor when the RF power transistor circuit is operating at an RF frequency.
9. A radio frequency (RF) power transistor circuit comprising:
a first power transistor having a control electrode coupled to an input terminal for receiving a radio frequency input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal;
a second power transistor having a control electrode coupled to the input terminal, a first current electrode coupled to the output terminal, and a second current electrode coupled to the power supply voltage terminal; and
a first decoupling circuit, comprising:
a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the first power transistor and the power supply voltage terminal and the first current electrode of the second power transistor and the power supply voltage terminal, wherein
the first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency and
the resonance is generated by an interaction between the first power transistor and the second power transistor.
10. The RF power transistor circuit of claim 9 , wherein a resistance value of the first resistor is in a range of 0.5 ohms to 5 ohms.
11. The RF power transistor circuit of claim 9 , wherein a capacitance value of the first capacitor is in a range of 10 nano Farads to 1,000 nano Farads.
12. The RF power transistor circuit of claim 9 , wherein an inductance value of the first inductive element is in a range of 0.1 nano Henry to 3 nano Henrys.
13. The RF power transistor circuit of claim 9 , further comprising a second decoupling circuit, the second decoupling circuit comprising a second inductive element, a second resistor, and a second capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal and between the control electrode of the second power transistor and the power supply voltage terminal.
14. A radio frequency (RF) power transistor circuit comprising:
a first power transistor having a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal;
a second power transistor having a control electrode coupled to the control electrode of the first power transistor, a first current electrode coupled to the first current electrode of the first power transistor, and a second current electrode coupled to the power supply voltage terminal;
a first decoupling circuit, comprising:
a first inductive element, a first resistor, and a first capacitor coupled together in series between the coupled together control electrodes of the first and second power transistors and the power supply voltage terminal, wherein
the first decoupling circuit is configured to dampen a resonance at a frequency lower than an RF frequency, and
the resonance is generated by an interaction between the first power transistor and the second power transistor; and
a second decoupling circuit, comprising:
a second inductive element, a second resistor, and a second capacitor coupled together in series between the coupled together first current electrodes of the first and second power transistors and the power supply voltage terminal.
15. The RF power transistor circuit of claim 14 , wherein:
a resistance value of each of the first and second resistors is in a range of 0.5 ohms to 5 ohms;
a capacitance value of each of the first and second capacitors is in a range of 10 nano Farads to 1,000 nano Farads; and
an inductance value of each of the first and second inductive elements is in a range of 0.1 nano Henry to 3 nano Henrys.
16. The RF power transistor circuit of claim 14 , wherein the first and second decoupling circuits are for dampening a resonance at a frequency lower than an RF frequency.
17. The RF power transistor circuit of claim 14 , further comprising:
a third capacitor having a first electrode coupled to the control electrode of the first power transistor, and a second electrode coupled to the power supply voltage terminal; and
a fourth capacitor having a first electrode coupled to the control electrode of the second power transistor, and a second electrode coupled to the power supply voltage terminal, wherein
the third and fourth capacitors provide an open circuit at an RF frequency.