Gas sensor with improved selectivity
The present invention relates to a gas sensor ( 1 ) for detecting gases, with at least one gas-sensitive layer which is applied to a substrate ( 2 ), wherein at least one conductor track ( 3 ) for contact-connecting the layer is also provided on the substrate ( 2 ), and wherein the conductor track ( 3 ) is formed from a doped metal oxide material with non-catalytic properties in order to avoid the conductor track ( 3 ) influencing the detection of the gas. This avoids the disadvantages of the prior art and provides contact-connection of the gas-sensitive layers which does not influence the sensitive properties when detecting the gas by means of the layer.
1. A gas sensor for the detection of gasses comprising at least one gas-sensitive layer applied on a substrate and at least one conductor track for contact-connecting the gas-sensitive layer on the substrate,
wherein the gas-sensitive layer comprises InFe, MoWO, or InSnO doped with a catalyst of Pt, Au, Ag and/or Pd; and
wherein the conductor track consists of an antimony-doped tin oxide (SnO2:Sb) material with non-catalytic properties, and wherein the conductor track does not influence the detection of the gas.
2. The gas sensor according to claim 1 , wherein the tin oxide (SnO2) of the conductor track is doped with 5% by weight antimony (Sb).
3. The gas sensor according to claim 1 , wherein the conductor track is applied onto the substrate through a lift-off method.
4. The gas sensor according to claim 1 , wherein the gas-sensitive layer on the substrate has a thickness of approximately 80 nm to 500 nm.
5. The gas sensor according to claim 1 , wherein the substrate is a micromechanical component, and wherein the gas sensor is a lab-on-the-chip sensor.
6. The gas sensor according to claim 4 wherein the gas-sensitive layer on the substrate has a thickness of approximately 100 nm.
7. A method for detecting gasses comprising
(a) heating the substrate of the gas sensor according to claim 1 to a temperature of 100° C. to 1100° C.;
(b) exposing the gas sensor to the gas or gasses to be detected; and
(c) determining the existence, concentration, or the type of gasses present, or a combination thereof.
8. The method according to claim 7 , wherein the substrate of the gas sensor is heated to 200° C. to 700° C.
9. The method according to claim 7 , wherein the substrate of the gas sensor is heated to 300° C. to 450° C.
10. A method for detecting gasses comprising
(a) exposing the gas sensor of claim 1 to the gas or gasses to be detected; and
(b) determining the existence, concentration, or the type of gasses present, or a combination thereof;
wherein the gas-sensitive layer is operated as a resistive measuring system, and
wherein the determining of step (b) comprises measuring the electric resistance of the gas-sensitive layer.
11. The method according to claim 7 wherein the gasses to be detected are NO2 and/or H2, and wherein the detection of NO2 and H2 is performed at different temperatures.