Exposure system and pattern formation method
View Patent ↗An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.
1. A pattern formation method comprising:
preparing a substrate including a resist film on a principal surface side of the substrate;
supplying a cleaning liquid from above the substrate to the principal surface side of the substrate;
removing the cleaning liquid from the principal surface side of the substrate;
performing pattern exposure by selectively irradiating the resist film with exposing light with an immersion liquid provided on the principal surface side of the substrate, from which the cleaning liquid is removed; and
forming a resist pattern by developing the resist film after the pattern exposure.
2. The pattern formation method of claim 1 , wherein
the cleaning liquid is water or ozone water.
3. The pattern formation method of claim 1 , wherein
the immersion liquid is water or perfluoropolyether.
4. The pattern formation method of claim 1 , wherein
the exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, Xe 2 laser, Ar 2 laser, or ArKr laser.
5. The pattern formation method of claim 1 , wherein
in the supplying the cleaning liquid from above the substrate, the cleaning liquid is supplied from a nozzle.
6. The pattern formation method of claim 1 , wherein
the performing pattern exposure includes
supplying the immersion liquid between the principal surface side of the substrate and a projection lens,
discharging the immersion liquid from between the principal surface side of the substrate and the projection lens, and
moving the substrate during the exposure, and
the supplying the immersion liquid, the discharging the immersion liquid, and the moving the substrate are simultaneously performed.
7. The pattern formation method of claim 6 , wherein
the supplying the immersion liquid, the discharging the immersion liquid, and the moving the substrate are continuously performed during the pattern exposure.
8. The pattern formation method of claim 1 , wherein
the resist film is a chemically amplified resist film.
9. The pattern formation method of claim 1 , wherein
the cleaning liquid dissolves a surface of the resist film.
10. The pattern formation method of claim 9 , wherein
the cleaning liquid is an alkaline aqueous solution.
11. The pattern formation method of claim 10 , wherein
the alkaline aqueous solution is a developer used for developing the resist film or a diluted developer obtained by diluting the developer.
12. The pattern formation method of claim 11 , wherein
the diluted developer has a concentration not lower than 0.01 N and lower than 0.26 N.
13. A pattern formation method comprising:
forming a resist film on a substrate;
cleaning the substrate on which the resist film has been formed;
after the step of cleaning the substrate, performing pattern exposure by selectively irradiating the resist film with exposing light with an immersion liquid provided on the substrate which has been cleaned; and
forming a resist pattern by developing the resist film after the pattern exposure,
wherein in the step of cleaning the substrate, the substrate is cleaned by a cleaning liquid supplied from above onto the surface of the substrate on which the resist film has been formed.
14. The pattern formation method of claim 13 , wherein
the cleaning liquid is water or ozone water.
15. The pattern formation method of claim 13 , wherein
in the supplying the cleaning liquid from above the substrate, the cleaning liquid is supplied from a nozzle.
16. A pattern formation method comprising:
preparing a substrate including a resist film on a principal surface side of the substrate;
setting the substrate on a first stage;
supplying a cleaning liquid from above the substrate to the principal surface side of the substrate which is set on the first stage;
removing the cleaning liquid from the principal surface side of the substrate;
after the step of removing the cleaning liquid, moving the substrate from the first stage to a second stage;
performing pattern exposure by selectively irradiating the resist film with exposing light with an immersion liquid provided on the principal surface side of the substrate which is on the second stage; and
forming a resist pattern by developing the resist film after the pattern exposure.
17. The pattern formation method of claim 16 , wherein
the cleaning liquid is water or ozone water.
18. The pattern formation method of claim 16 , wherein
in the supplying the cleaning liquid from above the substrate, the cleaning liquid is supplied from a nozzle.