Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages
View Patent ↗Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a carrier material, attaching a die in the cavity, wherein a backside of the die comprises a metal filled DBF, forming a dielectric material adjacent the die and on a bottom side of the carrier material, forming a coreless substrate by building up layers on the dielectric material, and removing the carrier material from the coreless substrate.
1. A structure comprising:
a die embedded in a coreless substrate, wherein the coreless substrate includes; a dielectric material adjacent the die, and wherein the dielectric material includes a fillet portion;
die pad interconnect structures disposed in a die pad area of the die; and
a DBF disposed on a backside of the die, wherein a top surface of the DBF is coplanar with a top surface of the fillet portion.
2. The structure of claim 1 wherein the DBF comprises an EMI shield.
3. The structure of claim 1 wherein the coreless substrate comprises a portion of a coreless bumpless buildup package structure.
4. The structure of claim 1 wherein the DBF comprises an adhesive.
5. The structure of claim 1 wherein the DBF comprises metallic filler particles.
6. The structure of claim 5 wherein metallic filler particles comprise at least one of copper and silver.
7. The structure of claim 5 wherein the metallic filler particles comprise a particle size of less than about 10 microns.
8. A structure comprising:
a die embedded in a coreless substrate, wherein the coreless substrate includes a dielectric material adjacent the die, and wherein the dielectric material includes a fillet portion;
a DBF is disposed on a backside of the die, wherein a top surface of the DBF is coplanar with a top surface of the fillet portion;
die pad interconnect structures disposed in a die pad area of the die; and
vias in the coreless substrate disposed in a non-die area that are connected to PoP lands, wherein the PoP lands are disposed within the coreless substrate adjacent the die, and wherein a top surface of the PoP lands is coplanar with a top surface of the coreless substrate.
9. The structure of claim 7 wherein the DBF comprises an EMI shield.
10. The structure of claim 7 wherein the coreless substrate comprises a portion of a coreless bumpless buildup package structure.
11. The structure of claim 10 wherein the die is fully embedded in the coreless bumpless buildup package.
12. The structure of claim 11 wherein a portion of the DBF is embedded in the coreless bumpless buildup package.
13. The structure of claim 7 wherein the DBF comprises metallic particles.
14. The structure of claim 13 wherein the coreless bumpless buildup package comprises RF components.
15. The structure of claim 8 further comprising a system comprising:
a bus is communicatively coupled to the structure; and
a DRAM communicatively coupled to the bus.
16. The structure of claim 8 wherein the DBF comprises a glass cloth backbone.