Methods of forming patterns, and methods of forming integrated circuits
Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.
1. A method of forming a pattern, comprising:
forming a block copolymer assembly over a substrate, the block copolymer assembly having first and second subunits arranged in a pattern of at least two domains; one of the domains being a first matrix formed from the second subunits, and one of the domains being first features formed from the first subunits; the first features being entirely contained within the first matrix;
exposing the block copolymer to first conditions that cause the first features to be disrupted so that a surface of the block copolymer comprises both the first and second subunits;
after disrupting the first features, exposing the surface to metal-containing material to couple metal to the first subunits; the metal coupling to the first subunits selectively relative to the second subunits;
exposing the block copolymer to second conditions that cause the block copolymer to redistribute such that the metal migrates from the surface into second features within a second matrix; the second matrix comprising the second subunits and the second features comprising the first subunits; the second features being entirely surrounded by the second matrix along at least one cross-section;
removing at least some of the block copolymer to form a patterned mask containing the metal from the second features; and
transferring a pattern defined by the patterned mask into the substrate with one or more etches.
2. The method of claim 1 wherein the first features are cylinders.
3. The method of claim 2 wherein the second features are cylinders.
4. The method of claim 1 wherein the first features are spheres.
5. The method of claim 4 wherein the second features are spheres.
6. The method of claim 1 wherein the metal comprises one or more of silicon, germanium, ruthenium, cobalt, nickel, titanium, tungsten, palladium, gold, copper, silver and iron.
7. The method of claim 1 wherein the coupling of the metal to the first subunits comprises coupling of metal-containing compound with the first subunits.
8. The method of claim 7 wherein the metal-containing compound is a metal oxide.
9. The method of claim 1 wherein the coupling of the metal to the first subunits comprises coupling of elemental metal with the first subunits.
10. A method of patterning a gate stack, comprising:
forming a gate stack over a semiconductor substrate;
forming a block copolymer assembly over the gate stack, the block copolymer assembly having a two or more domains arranged in a first pattern; the first pattern comprising a first matrix formed from second subunits, and comprising first features entirely contained within the first matrix; the first features being formed from first subunits;
exposing the block copolymer to first conditions that cause the first features to be disrupted so that the first subunits extrude through a surface of the block copolymer;
after disrupting the first features, exposing the surface to metal-containing material to couple metal to the first subunits; the metal coupling to the first subunits selectively relative to the second subunits;
exposing the block copolymer to second conditions that cause the block copolymer to redistribute such that the metal migrates from the surface into second features within a second matrix;
removing at least some of the block copolymer to form a patterned mask containing the metal from the second features; and
transferring a pattern defined by the patterned mask into the gate stack with one or more etches.
11. The method of claim 10 further comprising forming a hardmask over the gate stack, and forming the block copolymer over the hardmask; and wherein the transferring of the pattern into the gate stack comprises;
transferring the pattern from the patterned mask into the hardmask; and
transferring the pattern from the hardmask into the gate stack.
12. The method of claim 10 further comprising forming a carbon-containing material over the gate stack, and forming the block copolymer over the carbon-containing material; and wherein the transferring of the pattern into the gate stack comprises;
transferring the pattern from the patterned mask into the carbon-containing material; and
transferring the pattern from the carbon-containing material into the gate stack.
13. The method of claim 12 wherein the transferring of the pattern from the patterned mask into the carbon-containing material occurs simultaneously with the removing of the block copolymer.
14. The method of claim 12 further comprising forming a hardmask over the carbon-containing material; and wherein the transferring of the pattern from the patterned mask into the carbon-containing material comprises:
transferring the pattern from the patterned mask into the hardmask; and
transferring the pattern from the hardmask into the carbon-containing material.
15. The method of claim 10 wherein the first conditions include utilization of an acid, a base, or a substance that selectively attracts the first subunits relative to the second subunits.
16. The method of claim 10 wherein the gate stack includes, in ascending order from the substrate, a gate dielectric material, an electrically conductive gate material, and a capping dielectric material.
17. The method of claim 10 wherein the gate stack includes, in ascending order from the substrate, a gate dielectric material, a charge storage material, a body dielectric material, and a control gate material.