Nitride semiconductor light emitting device and method of manufacturing the same
View Patent ↗There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
1. A nitride semiconductor light emitting device comprising:
a conductive substrate;
a light emitting structure comprising a second conductivity nitride layer, an active layer and a first conductivity type nitride layer sequentially formed on the conductive substrate;
an electrode formed on one portion of the first conductivity type nitride layer; and
a light scattering layer formed on the other portion of the first conductivity type nitride layer, the light scattering layer formed of a material selected from a group consisting of sapphire, SiC, MgAl 2 O 4 , MgO, LiAlO 2 and LiGaO 2 and having an upper surface in which uneven surface structures are formed,
wherein ions having a larger radius than that of a particle of the material forming the light scattering layer are injected into the light scattering layer in order to destroy the crystallinity thereof.
2. The device of claim 1 , wherein the light scattering layer has a thickness of 50 to 200 μm.
3. The device of claim 1 , wherein the conductive substrate is formed of a material selected form a group consisting of Si, Ge, SiC, ZnO and GaAs.
4. The device of claim 1 , wherein the electrode is formed of a material selected form a group consisting of Cr, Au, Ti, Al, Rh, Pt, Ni, W, Ir, V, ITO, CIO, IZO and combination thereof.