Semiconductor device
View Patent ↗A distance “a” from a first gate electrode of a first transistor of a high-frequency circuit to a first contact is greater than a distance “b” from a second electrode of a second transistor of a digital circuit to a second contact. The first contact is connected to a drain or source of the first transistor, and the second contact is connected to a drain or source of the second transistor.
1. A semiconductor device comprising:
a high-frequency circuit connected to a first power supply terminal and a first ground terminal;
a digital circuit connected to a second power supply terminal and a second ground terminal;
a first transistor constituting part of the high-frequency circuit;
a second transistor constituting part of the digital circuit;
a first contact connected to a source or drain of the first transistor; and
a second contact connected to a source or drain of the second transistor,
wherein a distance “a” from a first gate electrode that is a gate electrode of the first transistor to the first contact is greater than a distance “b” from a second gate electrode that is the gate electrode of the second transistor to the second contact.
2. The semiconductor device according to claim 1 ,
wherein thicknesses of gate insulation films of the first transistor and the second transistor are equal.
3. The semiconductor device according to claim 1 ,
wherein an impurity structure for the sources and drains of the first transistor and the second transistor are the same.
4. The semiconductor device according to claim 1 ,
wherein impurity structures for channels of the first transistor and the second transistor are the same.
5. The semiconductor device according to claim 1 ,
wherein the first contact is connected to the drain of the first transistor.
6. The semiconductor device according to claim 5 ,
further comprising a third contact connected to the source of the first transistor,
wherein a distance “c” between the third contact and the first gate electrode is shorter than the distance “a”.
7. The semiconductor device according to claim 5 ,
further comprising a third contact connected to the source of the first transistor,
wherein a distance “c” between the third contact and the first gate electrode is equal to the distance “a”.
8. The semiconductor device according to claim 1 ,
wherein the first transistor has a multi-finger structure.
9. The semiconductor device according to claim 1 ,
wherein all of the transistors constituting the high-frequency circuit are first transistors where the distance “a” is greater than the distance “b”.