IP Library Granted Patent US 8,576,376
Granted Patent B2
US 8,576,376 · App. 12/767,521 · Granted Nov 5, 2013

Imaging optical system and projection exposure system for microlithography

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,576,376
App. No.
12/767,521
Granted
Nov 5, 2013
Kind
B2
Abstract

An imaging optical system includes a plurality of mirrors that image an object field in an object plane into an image field in an image plane. At least one of the mirrors is obscured, and thus has a opening for imaging light to pass through. The fourth-last mirror in the light path before the image field is not obscured and provides, with an outer edge of the optically effective reflection surface thereof, a central shadowing in a pupil plane of the imaging optical system. The distance between the fourth-last mirror and the last mirror along the optical axis is at least 10% of the distance between the object field and the image field. An intermediate image, which is closest to the image plane, is arranged between the last mirror and the image plane. The imaging optical system can have a numerical aperture of 0.9. These measures, not all of which must be effected simultaneously, lead to an imaging optical system with improved imaging properties and/or reduced production costs.

Claims (40)

1. An imaging optical system which during operation directs light along a path to image an object field in an object plane to an image field in an image plane, the imaging optical system comprising:

at least six mirrors positioned along an optical axis of the imaging optical system, where the at least six mirrors direct the light along the path,

wherein at least one of the mirrors has an opening through which the light passes, and a distance along the optical axis between a fourth-last mirror in the path and a last mirror in the path is at least 10% of the distance between the object field and the image field along the optical axis,

wherein the distance is between a piercing point of the optical axis and the fourth-last mirror and a piercing point of the optical axis and the last mirror,

wherein the piercing point of the fourth-last mirror is a point where the optical axis passes a reflection surface of the fourth-last mirror or a point where the optical axis passes a surface which carries on continuously from the reflection surface of the fourth-last mirror based on the optical design of the fourth-last mirror, and the piercing point of the last mirror is a point where the optical axis passes a reflection surface of the last mirror or a point where the optical axis passes a surface which carries on continuously from the reflection surface of the last mirror based on the optical design of the last mirror.

2. The imaging optical system of claim 1 , wherein the fourth-last mirror does not include an opening and shadows a central portion of a pupil plane of the imaging optical system.

3. The imaging optical system of claim 2 , wherein the fourth-last mirror is a convex mirror.

4. The imaging optical system of claim 2 , wherein the fourth-last mirror lies on an optical axis of the imaging optical system.

5. The imaging optical system of claim 2 , wherein the fourth-last mirror is arranged in the region of a pupil plane of the imaging optical system.

6. The imaging optical system of claim 1 , wherein the imaging optical system has an image field-side numerical aperture of at least 0.4.

7. The imaging optical system of claim 1 , wherein the imaging optical system has a maximum root mean square wavefront error of less than 10 nm.

8. The imaging optical system of claim 1 , wherein the imaging optical system has a maximum distortion of less than 10 nm.

9. The imaging optical system of claim 1 , wherein the imaging optical system has a pupil obscuration of less than 20%.

10. The imaging optical system of claim 1 , wherein the image plane is parallel to the object plane.

11. The imaging optical system of claim 1 , wherein the image field is larger than 1 mm 2 .

12. The imaging optical system of claim 1 , wherein the image field is a rectangular or arc-shaped image field with a side length of 13 mm.

13. The imaging optical system of claim 1 , wherein the imaging optical system has a reduction imaging scale of 8.

14. The imaging optical system of claim 1 , wherein an odd number of mirrors of the imaging optical system have an opening through which the light passes.

15. The imaging optical system of claim 1 , wherein the imaging optical system images the object field to at least one intermediate image between the object plane and the image plane, the at least one intermediate image being in a plane that is folded in the vicinity of a pupil plane of the imaging optical system.

16. The imaging optical system of claim 1 , wherein principal rays in the light path between the object plane and a first of the mirrors in the light path extend divergently from neighbouring field points in the object field.

17. The imaging optical system of claim 1 , wherein the imaging optical system includes exactly six mirrors and the imaging optical system images the object field to exactly two intermediate image between the object plane and the image plane.

18. The imaging optical system of claim 1 , wherein a third-last mirror and a fifth-last mirror along the path before the image plane both include openings through which the light passes.

19. A projection exposure system for microlithography comprising:

a light source;

an illumination optical system; and

the imaging optical system of claim 1 ,

wherein during operation the light source provides light to the illumination optical system which directs the light to the object field of the imaging optical system.

20. The projection exposure system of claim 19 , wherein the light provided by the light source has a wavelength between 10 nm and 30 nm.

21. The projection exposure system of claim 19 , wherein the imaging optical system comprises at least eight mirrors positioned along the optical axis.

22. The projection exposure system of claim 19 , wherein a fourth-last mirror along the path before the image field does not include an opening and shadows a central portion of a pupil plane of the imaging optical system.

23. A method for producing a microstructured component, the method comprising:

providing a reticle and a wafer;

projecting a structure on the reticle onto a light-sensitive layer on the wafer by using a projection exposure system; and

producing a microstructure on the wafer based on the structure projected onto the light sensitive layer, wherein the projection exposure system comprises:

a light source;

an illumination optical system; and

the imaging optical system of claim 1 , and wherein during operation the light source provides light to the illumination optical system which directs the light to the object field of the imaging optical system.

24. The method of claim 23 , wherein the imaging optical system comprises at least eight mirrors positioned along the optical axis.

25. The method of claim 23 , wherein a fourth-last mirror along the path before the image field does not include an opening and shadows a central portion of a pupil plane of the imaging optical system.

26. The imaging optical system of claim 1 , comprising at least eight mirrors positioned along the optical axis.

Assignments (2)
A MODIFYING CONVERSION Recorded Jan 18, 2011
From: CARL ZEISS SMT AG
To: CARL ZEISS SMT GMBH
Reel/Frame 025763/0367 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2010
From: MANN, HANS-JUERGEN
To: CARL ZEISS SMT AG
Reel/Frame 024455/0327 →