Organic photovoltaic device with interfacial layer and method of fabricating same
An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5′-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2′-bithiophene (PABTSi 2 ).
1. An organic photovoltaic device, comprising:
(a) an anode;
(b) a cathode;
(c) an active layer disposed between the anode and the cathode; and
(d) an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5′-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2′-bithiophene (PABTSi 2 ).
2. The organic photovoltaic device of claim 1 , wherein the active layer comprises poly(3-hexylthiophene) (P3HT).
3. The organic photovoltaic device of claim 2 , wherein the active layer further comprises [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM).
4. The organic photovoltaic device of claim 3 , wherein the ratio of P3HT and PCBM is about 1:1 by weight.
5. The organic photovoltaic device of claim 1 , wherein the interfacial layer further comprises poly[9,9-dioctylfluorene-co-N-[4-(3-methylpropyl)]-diphenylamine] (TFB).
6. The organic photovoltaic device of claim 5 , wherein PABTSi 2 and TFB are cross-linked and blended.
7. The organic photovoltaic device of claim 5 , wherein the ratio of PABTSi 2 and TFB is less than 1 by weight.
8. The organic photovoltaic device of claim 7 , wherein the ratio of PABTSi 2 and TFB is about 1:2.
9. The organic photovoltaic device of claim 7 , wherein the ratio of PABTSi 2 and TFB is about 1:3.
10. The organic photovoltaic device of claim 1 , wherein the interfacial layer has a thickness in the range between about 20 nm and 50 nm.
11. The organic photovoltaic device of claim 1 , wherein the anode comprises indium tin oxide (ITO).
12. The organic photovoltaic device of claim 1 , wherein the cathode comprises aluminum (Al).
13. The organic photovoltaic device of claim 1 , further comprising a layer of lithium fluoride (LiF) disposed between the active layer and the cathode.
14. A method of fabricating an organic photovoltaic device, comprising the steps of:
(a) forming an anode;
(b) depositing an interfacial layer on the anode, the interfacial layer comprising 5,5′-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2′-bithiophene (PABTSi 2 );
(c) depositing an active layer on the interfacial layer; and
(d) forming a cathode on the active layer.
15. The method of claim 14 , wherein the active layer comprises poly(3-hexylthiophene) (P3HT).
16. The method of claim 15 , wherein the active layer further comprises [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM).
17. The method of claim 16 , wherein the ratio of P3HT and PCBM is about 1:1 by weight.
18. The method of claim 14 , wherein the interfacial layer further comprises poly[9,9-dioctylfluorene-co-N-[4-(3-methylpropyl)]-diphenylamine] (TFB).
19. The method of claim 18 , wherein PABTSi 2 and TFB are cross-linked and blended.
20. The method of claim 18 , wherein the ratio of PABTSi 2 and TFB is less than 1 by weight.
21. The method of claim 20 , wherein the ratio of PABTSi 2 and TFB is about 1:2.
22. The method of claim 20 , wherein the ratio of PABTSi 2 and TFB is about 1:3.
23. The method of claim 14 , wherein the interfacial layer has a thickness in the range between about 20 nm and 50 nm.
24. The method of claim 18 , wherein the step of depositing an interfacial layer comprises the step of spin-coating a film of PABTSi 2 :TFB on the anode using a solvent.
25. The method of claim 24 , wherein the solvent is chlorobenzene (CB).
26. The method of claim 24 , wherein the step of depositing an interfacial layer further comprises annealing the film at an annealing temperature above 20° C. subsequent to the step of spin-coating.
27. The method of claim 26 , wherein the annealing temperature is between about 60° C. and 150° C.
28. The method of claim 16 , wherein the step of depositing an active layer comprises the step of spin-coating a film of P3HT:PCBM on the interfacial layer using o-dichlorobenzene (ODCB) as a solvent.
29. The method of claim 14 , wherein the anode comprises indium tin oxide (ITO).
30. The method of claim 14 , wherein the cathode comprises aluminum (Al).
31. The method of claim 14 , further comprising the step of depositing a layer of lithium fluoride (LiF) on the active layer prior to forming a cathode.
32. An article of manufacture made by the method of claim 14 .
33. An article of manufacture comprising a layer that comprises 5,5′-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2′-bithiophene (PABTSi 2 ).
34. The article of manufacture of claim 33 , wherein the layer further comprises poly[9,9-dioctylfluorene-co-N-[4-(3-methylpropyl)]-diphenylamine] (TFB).
35. The article of manufacture of claim 34 , wherein PABTSi 2 and TFB are cross-linked and blended.
36. The article of manufacture of claim 35 is an organic field-effect transistor.
37. The article of manufacture of claim 35 comprising an organic field-effect transistor that has the layer.