DYE-SENSITIZED SOLAR CELL USING COMPOSITE SEMICONDUCTOR MATERIAL
The invention relates to a dye-sensitized solar cell using composite semiconductor materials, said composite semiconductor materials comprising semiconductor material particles and inorganic particulates coated on the surfaces of the semiconductor material particles, wherein the composite semiconductor materials have a surface area in the range from about 15 to about 80 m 2 /g. Since the composite semiconductor materials used in the present invention have a large surface area, the solar cell according to the present invention can have an increased adsorption amount of photosensitizers without increasing the thickness of the semiconductor material layer, and exhibits increased efficiency.
1 . A solar cell, comprising:
a first electrode, comprising a conductive substrate, a semiconductor material layer, and a photosensitizer;
an electrolyte; and
a second electrode,
wherein the semiconductor material layer comprises a composite semiconductor material layer, the composite semiconductor material layer comprising composite semiconductor materials, where the composite semiconductor materials comprise first semiconductor material particles and inorganic particulates on surfaces of the first semiconductor material particles, and the composite semiconductor materials have a surface area in a range from about 15 to about 80 m 2 /g.
2 . The solar cell according to claim 1 , wherein the composite semiconductor materials have a surface area in a range from about 20 to about 60 m 2 /g.
3 . The solar cell according to claim 1 , wherein the ratio of the particle size of the inorganic particulates to that of the first semiconductor material particles is not greater than ½.
4 . The solar cell according to claim 1 , wherein the first semiconductor material particles have a particle size in a range from 100 nanometers (nm) to 400 nm.
5 . The solar cell according to claim 1 , wherein the inorganic particulates have a particle size in a range from 5 nm to 50 nm.
6 . The solar cell according to claim 1 , wherein the semiconductor material layer further comprises a second semiconductor material layer, the second semiconductor material layer comprising second semiconductor materials that comprise second semiconductor material particles having a particle size in a range from 10 nm to 80 nm.
7 . The solar cell according to claim 1 , wherein the first semiconductor material particles are independently selected from the group consisting of titanium oxide, zinc oxide, tin oxide, zirconia, strontium titanate, silicon oxide, indium oxide, zinc sulfide, cadmium selenide, gallium phosphide, cadmium telluride, molybdenum selenide, tungsten selenide, niobium oxide, tungsten oxide, potassium tantalate, cadmium sulfide and any mixture thereof.
8 . The solar cell according to claim 6 , wherein the second semiconductor material particles are independently selected from the group consisting of titanium oxide, zinc oxide, tin oxide, zirconia, strontium titanate, silicon oxide, indium oxide, zinc sulfide, cadmium selenide, gallium phosphide, cadmium telluride, molybdenum selenide, tungsten selenide, niobium oxide, tungsten oxide, potassium tantalate, cadmium sulfide and any mixture thereof.
9 . The solar cell according to claim 1 , wherein the inorganic particulates are selected from the group consisting of titanium oxide, zinc oxide, tin oxide, zirconia, strontium titanate, silicon oxide, indium oxide, zinc sulfide, cadmium selenide, gallium phosphide, cadmium telluride, molybdenum selenide, tungsten selenide, niobium oxide, tungsten oxide, potassium tantalate, cadmium sulfide, calcium phosphate, calcium oxide and any mixture thereof.
10 . The solar cell according to claim 1 , wherein the first semiconductor material particles and the inorganic particulates are independently titanium oxide, zinc oxide or tin oxide.
11 . The solar cell according to claim 6 , wherein the second semiconductor material particles are titanium oxide, zinc oxide or tin oxide.
12 . The solar cell according to claim 6 , wherein the first semiconductor material particles and the inorganic particulates are independently titanium oxide, zinc oxide or tin oxide.