Energy conversion device with support member having pore channels
View Patent ↗Energy devices such as energy conversion devices and energy storage devices and methods for the manufacture of such devices. The devices include a support member having an array of pore channels having a small average pore channel diameter and having a pore channel length. Material layers that may include energy conversion materials and conductive materials are coaxially disposed within the pore channels to form material rods having a relatively small cross-section and a relatively long length. By varying the structure of the materials in the pore channels, various energy devices can be fabricated, such as photovoltaic (PV) devices, radiation detectors, capacitors, batteries and the like.
1. An energy conversion device, comprising:
a support member comprising an array of pore channels, the pore channels having an average pore channel diameter of not greater than about 10 μm and having a pore channel length; and
a plurality of material layers coaxially disposed along the length of the pore channels, the material layers comprising:
a first conductor layer;
a second conductor layer; and
an energy conversion layer including at least a first energy conversion material and a second energy conversion material, wherein the first energy conversion material is a p-type semiconductor and the second energy conversion material is an n-type semiconductor, wherein the first conductor layer is coaxially disposed within a shell of the first energy conversion material, wherein the first energy conversion material is coaxially disposed within a shell of the second energy conversion material, wherein the second energy conversion material is disposed within a shell of the second conductor layer.
2. An energy conversion device as recited in claim 1 , wherein the support member is anodic aluminum oxide.
3. An energy conversion device as recited in claim 1 , wherein the average pore channel diameter is at least about 1 nm and is not greater than about 1000 nm.
4. An energy conversion device as recited in claim 1 , wherein the pore channel length is at least about 0.1 μm and is not greater than about 500 μm.
5. An energy conversion device as recited in claim 1 , wherein the energy conversion layer has a thickness of at least about 1 nm and not greater than about 200 nm.
6. An energy conversion device as recited in claim 1 , wherein the support member has a pore channel density of at least about 10 8 pore channels per cm 2 and not greater than about 10 10 pore channels per cm 2 .
7. An energy conversion device as recited in claim 1 , wherein the pore channels extend through the support member.
8. An energy conversion device as recited in claim 1 , wherein the first conductor layer comprises a hole conductor material.
9. An energy conversion device as recited in claim 1 , wherein the second conductor layer comprises an optically transparent electrically conductive material.
10. An energy conversion device as recited in claim 9 , wherein the energy conversion layer comprises a p-n junction disposed between the second conductor layer and the first conductor layer.
11. An energy conversion device as recited in claim 9 , wherein the energy conversion layer comprises a Schottky junction disposed between the second conductor layer and the first conductor layer.
12. An energy conversion device as recited in claim 9 , wherein the energy conversion device is a photovoltaic device.
13. An energy conversion device as recited in claim 1 , wherein the energy conversion device is a radiation detector.
14. An energy conversion device as recited in claim 13 , wherein the plurality of material layers further comprises a neutron converter layer disposed within a shell of the first conductor layer.
15. An energy conversion device as recited in claim 14 , wherein the neutron converter layer comprises a material selected from the group consisting of 10 B, 6 Li and polyethylene.
16. An energy conversion device as recited in claim 1 , wherein the energy conversion device is a light emitting diode.
17. An energy conversion device as recited in claim 16 , wherein the energy conversion layer comprises a layer of n-type semiconductor and a layer of p-type semiconductor, and wherein the second conductor layer comprises an optically transparent electrically conductive material.
18. An energy device as recited in claim 16 , wherein the energy conversion layer comprises a multiple quantum well structure.
19. A method for the fabrication of an energy conversion device, comprising the steps of:
providing a support member comprising an array of pore channels, the pore channels having an average pore diameter of not greater than about 10 μm and having a pore channel length;
depositing at least a first material layer within the pore channels to coat an interior surface of the pore channels and form a first material layer within the pore channels, wherein the first material layer comprises a first conductive material;
depositing a second material layer within the first material layer, wherein the second material layer is coaxially disposed within the first material layer, wherein the second material layer comprises at least a first energy conversion material, and wherein the first energy conversion material comprises an n-type semiconductor;
depositing a third material layer within the second material layer, wherein the third material layer is coaxially disposed within the second material layer, wherein the third material layer comprises at least a second energy conversion material, and wherein the second energy conversion material comprises a p-type semiconductor; and
depositing a fourth material layer within the third material layer, wherein the fourth material layer is coaxially disposed within the third material layer, and wherein the fourth material layer comprises a second conductive material.