Semiconductor structure and manufacturing method thereof
A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. Firstly, a semiconductor substrate having an active surface and a back surface is provided. The active surface is opposite to the back surface, and the semiconductor substrate includes at least one grounding pad disposed on the active surface. Secondly, at least one through silicon via is formed through the semiconductor substrate from the back surface to the active surface thus exposing the grounding pad. Then, a conductive layer is formed on the back surface of the semiconductor substrate and filled into the through silicon via to electrically connect to the grounding pad and the semiconductor substrate.
1. A method for manufacturing semiconductor structure, the method comprising:
providing a semiconductor substrate having an active surface and a back surface on opposite sides thereof, wherein the semiconductor substrate comprising at least one grounding pad disposed on the active surface;
forming at least one through silicon via through the semiconductor substrate from the back surface and thus exposing the grounding pad; and
forming a conductive layer on the back surface of the semiconductor substrate, and the conductive layer filled into the through silicon via to electrically connect to the grounding pad and the semiconductor substrate.
2. The method claimed in claim 1 , further comprising adhering the active surface of the semiconductor substrate to a carrier substrate before forming the through silicon via.
3. The method claimed in claim 2 , further comprising separating the semiconductor substrate from the carrier substrate after forming the conductive layer.
4. The method claimed in claim 3 , wherein the semiconductor substrate further comprises at least one power supply/signal pad disposed on the active surface, and the method further comprises performing a wire bonding for the power supply/signal pad after separating the semiconductor substrate from the carrier substrate.
5. A semiconductor structure, comprising:
a semiconductor substrate having a active surface, a back surface and at least one through silicon via and comprising at least one grounding pad disposed on the active surface, wherein the active surface is opposite to the back surface, the through silicon via is formed through the semiconductor substrate from the back surface to the active surface and thus exposing the grounding pad; and
a conductive layer disposed on the back surface of the semiconductor substrate and filled into the through silicon via to electrically connected to the grounding pad and the semiconductor substrate.
6. The semiconductor structure claimed in claim 5 , wherein the semiconductor substrate further comprises at least one power supply/signal pad disposed on the active surface.
7. The semiconductor structure claimed in claim 6 , wherein the power supply/signal pad is disposed closer to the edge of the semiconductor substrate comparing to the grounding pad.
8. The semiconductor structure claimed in claim 5 , wherein materials of the conductive layer comprises copper or aluminum.