Semiconductor device having a metal oxide channel

1. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula A x B x C x D x O x wherein A is In, B is Ga, C is Zn, D is Cd, O is atomic oxygen, and wherein each x is independently a non-zero integer;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

2. The semiconductor device of claim 1 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

3. The semiconductor device of claim 1 , wherein the one or more compounds of the formula A x B x C x D x O x includes an atomic composition of ratio A:B:C:D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.

4. The semiconductor device of claim 1 , wherein the metal oxide includes one or more metal oxides including indium, gallium, zinc, and cadmium.

5. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes an indium-gallium-zinc metal oxide formed from a precursor composition that includes indium, gallium, and zinc oxides, wherein the formed indium-gallium-zinc metal oxide is in an amorphous form; and

a gate electrode separated from the channel by a gate dielectric.

6. The semiconductor device of claim 5 , wherein the source, drain, and gate electrodes include a substantially transparent material.

7. The semiconductor device of claim 5 , wherein the channel is deposited with an ink-jet deposition technique.

8. The semiconductor device of claim 5 , including a substrate or substrate assembly upon which the semiconductor device is formed.