Scalable transfer-join bonding lock-and-key structures
View Patent ↗Scalable transfer-join bonding techniques are provided. In one aspect, a transfer-join bonding method is provided. The method includes the following steps. A first bonding structure is provided having at least one metal pad embedded in an insulator and at least one via in the insulator over the metal pad. The via has tapered sidewalls. A second bonding structure is provided having at least one copper stud adapted to have a taper that complements the tapered sidewalls of the via, such that the via and the copper stud fit together like a lock-and-key. The first bonding structure is bonded to the second bonding structure by way of a metal-to-metal bonding between the metal pad and the copper stud that deforms the copper stud. A transfer-join bonded structure is also provided.
1. A transfer-join bonding method, comprising the steps of:
providing a first bonding structure having at least one metal pad embedded in an insulator and at least one via in the insulator over the metal pad, wherein the via has tapered sidewalls;
providing a second bonding structure having at least one copper stud adapted to have a taper that complements the tapered sidewalls of the via, such that the via and the copper stud fit together like a lock-and-key; and
bonding the first bonding structure to the second bonding structure by way of a metal-to-metal bonding between the metal pad and the copper stud that deforms the copper stud.
2. The method of claim 1 , further comprising the step of:
lining sidewalls of the via with copper.
3. The method of claim 1 , wherein the sidewalls of the via are tapered at an angle of less than 90 degrees relative to a surface plane of the first bonding structure.
4. The method of claim 1 , wherein the copper stud is tapered at an angle of greater than 90 degrees relative to a surface plane of the second bonding structure.
5. The method of claim 1 , wherein the metal pad comprises copper.
6. The method of claim 1 , wherein the metal pad comprises a low melting point metal.
7. The method of claim 6 , wherein the low melting point metal has a melting point that is less than about 400 degrees Celsius.
8. The method of claim 6 , wherein the low melting point metal comprises one or more of tin, indium, gold, lead, silver, alloys containing at least one of the foregoing metals and alloys containing at least one of the foregoing metals and copper.
9. The method of claim 1 , further comprising the step of:
adding an adhesive material around at least a portion of the copper stud.
10. The method of claim 1 , wherein the first bonding structure comprises a wafer or a chip and the second bonding structure comprises a wafer or a chip.
11. A transfer-join bonded structure, comprising:
a first bonding structure having at least one metal pad embedded in an insulator and at least one via in the insulator over the metal pad, wherein the via has tapered sidewalls; and
a second bonding structure having at least one copper stud adapted to have a taper that complements tapered to complement the tapered sidewalls of the via, such that the via and the copper stud fit together like a lock-and-key,
wherein the first bonding structure and the second bonding structure are bonded together by way of a metal-to-metal bonding between the metal pad and the copper stud that deforms the copper stud.
12. The structure of claim 11 , further comprising:
a copper liner lining sidewalls of the via.
13. The structure of claim 11 , wherein the sidewalls of the via are tapered at an angle of less than 90 degrees relative to a surface plane of the first bonding structure.
14. The structure of claim 11 , wherein the copper stud is tapered at an angle of greater than 90 degrees relative to a surface plane of the second bonding structure.
15. The structure of claim 11 , wherein the metal pad comprises copper.
16. The structure of claim 11 , wherein the metal pad comprises a low-melting point metal.
17. The structure of claim 16 , wherein the low melting point metal has a melting point that is less than about 400 degrees Celsius.
18. The structure of claim 16 , wherein the low melting point metal comprises one or more of tin, indium, gold, lead, silver, alloys containing at least one of the foregoing metals and alloys containing at least one of the foregoing metals and copper.
19. The structure of claim 11 , further comprising;
an adhesive material between the first bonding structure and the second bonding structure.
20. The structure of claim 11 , wherein the first bonding structure comprises a wafer or a chip and the second bonding structure comprises a wafer or a chip.