IP Library Granted Patent US 8,642,123
Granted Patent B1
US 8,642,123 · App. 12/780,566 · Granted Feb 4, 2014

Integration of ZnO nanowires with nanocrystalline diamond fibers

Inventors: Ashok Kumar (Tampa, FL); Manoj Kumar Singh (Aveiro, PT); Sathyaharish Jeedigunta (Tampa, FL)
Assignee: University of South Florida
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Quick Facts
Patent No.
US 8,642,123
App. No.
12/780,566
Granted
Feb 4, 2014
Kind
B1
Abstract

Provided herein is a method for the synthesis and the integration of ZnO nanowires and nanocrystalline diamond as a novel hybrid material useful in next generation MEMS/NEMS devices. As diamond can provide a highly stable surface for applications in the harsh environments, realization of such hybrid structures may prove to be very fruitful. The ZnO nanowires on NCD were synthesized by thermal evaporation technique.

Claims (25)

1. A method of synthesizing a nanowire with nanocrystalline diamond, comprising the steps of:

preparing a nanocrystalline diamond film further comprising

cleaning the nanocrystalline diamond using an ultrasonic vibration bath;

washing the nanocrystalline diamond with alcohol;

growing a metal oxide nanowire using vapor-liquid-solid process, further comprising:

applying a catalyst to the nanocrystalline diamond film;

providing a metal oxide composition;

heating the nanocrystalline diamond film and the metal oxide composition to a temperature sufficient to induce nanowire growth; and

permitting the metal oxide to form nanowires in the nanocrystalline diamond film, wherein the nanowires are integrated into the crystals of the nanocrystalline diamond film.

2. The method of claim 1 wherein the nanocrystalline diamond film is grown on a substrate.

3. The method of claim 2 wherein the substrate is Silicon.

4. The method of claim 2 wherein the nanocrystalline diamond film is grown using microwave-plasma-enhanced-chemical-vapor-deposition.

5. The method of claim 2 wherein the nanocrystalline diamond film is grown in an atmosphere comprising about 98% Argon.

6. The method of claim 5 wherein the nanocrystalline diamond film is grown in an atmosphere comprising about 98% Argon, 1% Methane and about 1% Hydrogen.

7. The method of claim 2 wherein the nanocrystalline diamond is grown at a pressure of about 100 Torr for about 3 hours.

8. The method of claim 1 wherein the nanocrystalline diamond is grown at a temperature of about 750° C.

9. The method of claim 1 wherein the catalyst is Gold.

10. The method of claim 1 wherein the catalyst is formed in a layer about 5 nm thick.

11. The method of claim 1 wherein the metal oxide composition is a metal oxide nanopowder.

12. The method of claim 11 wherein the metal oxide comprising the source is ZnO.

13. The method of claim 12 wherein the metal oxide nanopowder is about 50 to 70 nm grain size.

14. The method of claim 1 wherein the nanocrystalline diamond is washed with methanol.

15. The method of claim 1 wherein the ultrasonic vibration bath is undertaken for about 15 minutes.

16. The method of claim 1 wherein the metal oxide composition is a mixture of ZnO powder and graphite powder at a 1:1 weight ratio.

17. The method of claim 1 wherein the metal oxide nanowire is grown using vapor-liquid-solid process in an Argon atmosphere.

Assignments (3)
CONFIRMATORY LICENSE Recorded Mar 9, 2015
From: UNIVERSITY OF SOUTH FLORIDA
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 035146/0627 →
CONFIRMATORY LICENSE Recorded Dec 27, 2010
From: UNIVERSITY OF SOUTH FLORIDA
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 025568/0644 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2010
From: KUMAR, ASHOK
To: UNIVERSITY OF SOUTH FLORIDA
Reel/Frame 025234/0949 →
Continuity (2)
Continuation In Part 11689690 · Mar 22, 2007
Provisional Application 60767373 · Mar 22, 2006