High voltage deep trench capacitor
View Patent ↗A semiconductor process and apparatus provide a high voltage deep trench capacitor structure ( 10 ) that is integrated in an integrated circuit, alone or in alignment with a fringe capacitor ( 5 ). The deep trench capacitor structure is constructed from a first capacitor plate ( 4 ) that is formed from a doped n-type SOI semiconductor layer (e.g., 4 a - c ). The second capacitor plate ( 3 ) is formed from a doped p-type polysilicon layer ( 3 a ) that is tied to the underlying substrate ( 1 ).
1. An integrated circuit deep trench capacitor structure, comprising:
a first capacitor plate formed from a doped SOI semiconductor layer that is separated from a substrate layer by a buried insulator layer;
a trench oxide layer that is located in a first trench opening formed in the doped SOI semiconductor layer and adjacent to the first capacitor plate, where the first trench opening exposes the buried isolation layer; and
a second capacitor plate that is located in a second trench opening formed in the trench oxide layer and buried isolation layer to expose a portion of the substrate layer, the second capacitor plate comprising a doped semiconductor layer that is located adjacent to the trench oxide layer and that is tied to the substrate layer;
where the first and second capacitor plates are separated from one another by the trench oxide layer and where the second trench opening is positioned inside the first trench opening.
2. The capacitor structure of claim 1 , where the first capacitor plate comprises a SOI semiconductor layer that is highly doped with n-type impurities.
3. The capacitor structure of claim 1 , where the second capacitor plate comprises a semiconductor layer that is highly doped with p-type impurities.
4. The capacitor structure of claim 1 , where the substrate layer comprises a p-type substrate layer.
5. The capacitor structure of claim 1 , where the doped semiconductor layer is formed to encircle the doped SOI semiconductor layer so that the doped SOI semiconductor layer is separated from the centrally positioned doped semiconductor layer by part of the trench oxide layer.
6. The capacitor structure of claim 1 , further comprising a fringe capacitor comprising:
a first plurality of metal layers formed in alignment over and electrically connected to the first capacitor plate to form a first fringe capacitor plate; and
a second plurality of metal layers formed in alignment over and electrically connected to the second capacitor plate to form a second fringe capacitor plate capacitively coupled to the first fringe capacitor plate,
where the first plurality of metal layers formed in alignment over the first capacitor plate are separated from the second plurality of metal layers formed in alignment over the second capacitor plate by one or more dielectric layers.
7. An integrated circuit deep trench capacitor structure, comprising:
a first capacitor plate formed from a first doped semiconductor layer that is separated from a substrate layer by buried isolation dielectric layer;
a trench oxide region that is located in a first trench opening formed in the first doped semiconductor layer to expose the buried isolation dielectric layer, where the trench oxide region is adjacent to the first capacitor plate; and
a second capacitor plate that is located in a second trench opening formed in the trench oxide region and buried isolation dielectric layer to expose a portion of the substrate layer, the second capacitor plate comprising a second doped semiconductor layer that is tied to the substrate layer;
where the first and second capacitor plates are separated from one another by at least part of the trench oxide regions which forms a deep trench capacitor dielectric layer between the first and second capacitor plates.
8. The capacitor structure of claim 7 , where the first capacitor plate comprises a semiconductor layer that is highly doped with n-type impurities.
9. The capacitor structure of claim 7 , where the second capacitor plate comprises a semiconductor layer that is highly doped with p-type impurities.
10. The capacitor structure of claim 7 , where the substrate layer comprises a p-type substrate layer.
11. The capacitor structure of claim 7 , where the second trench opening is formed within the first trench opening.
12. The capacitor structure of claim 7 , where the first doped semiconductor layer is formed encircles a centrally positioned second doped semiconductor layer.
13. The capacitor structure of claim 7 , further comprising a fringe capacitor comprising:
a first plurality of metal layers formed in alignment over and electrically connected to the first capacitor plate to form a first fringe capacitor plate; and
a second plurality of metal layers formed in alignment over and electrically connected to the second capacitor plate to form a second fringe capacitor plate capacitively coupled to the first fringe capacitor plate,
where the first plurality of metal layers formed in alignment over the first capacitor plate are separated from the second plurality of metal layers formed in alignment over the second capacitor plate by one or more dielectric layers.
14. An integrated circuit deep trench capacitor, comprising:
a substrate;
one or more trench oxide sidewall layers formed over the substrate in a first deep trench opening which exposes a buried isolation dielectric layer formed on the substrate;
a first doped semiconductor layer formed as a first capacitor plate in a second trench opening formed inside the first deep trench opening and through the buried isolation dielectric layer to expose the substrate, where the first doped semiconductor layer is tied to the substrate; and
a second doped semiconductor layer formed as a second capacitor plate formed outside of the first trench opening and electrically insulated from the substrate by the buried isolation dielectric layer, where the one or more trench oxide sidewall layers form a deep trench capacitor dielectric layer between the first and second capacitor plates.
15. The integrated circuit deep trench capacitor of claim 14 , where the second doped semiconductor layer is formed from a doped semiconductor-on-insulator layer that is isolated from the substrate by the buried isolation dielectric layer.
16. The integrated circuit deep trench capacitor of claim 14 , where the second capacitor plate comprises a SOI semiconductor layer that is highly doped with n-type impurities and the substrate comprises a p-type substrate layer.
17. The integrated circuit deep trench capacitor of claim 14 , where the first capacitor plate comprises a semiconductor layer that is highly doped with p-type impurities.
18. The integrated circuit deep trench capacitor of claim 14 , where the second doped semiconductor layer is formed to encircle a centrally positioned first doped semiconductor layer so that the second doped semiconductor layer is separated from the centrally positioned first doped semiconductor layer by at least a part of the one or more trench oxide sidewall layers.
19. The integrated circuit deep trench capacitor of claim 14 , further comprising a fringe capacitor comprising:
a plurality of metal layers formed in alignment over and electrically connected to the first capacitor plate; and
a plurality of metal layers formed in alignment over and electrically connected to the second capacitor plate,
where the plurality of metal layers formed in alignment over the first capacitor plate are separated from the plurality of metal layers formed in alignment over the second capacitor plate by one or more dielectric layers.