Band-pass structure electrostatic discharge protection circuit
The present invention relates to an electrostatic discharge (ESD) protection circuit, and more particularly to a band-pass structure electrostatic discharge protection circuit. An ESD protection circuit is disposed at the input of a radio frequency (RF) core circuit. The ESD protection circuit comprises a plurality of diodes and inductors constructing a plurality of discharging paths, wherein the diodes and inductors forms a band-pass filter structure. Such that, the RF core circuit with the ESD protection circuit of the present invention feature much higher ESD robustness and better RF performance than the conventional design.
1. A band-pass structure electrostatic discharge (ESD) protection circuit which is connected between an external pad and an input/output (I/O) port of a radio frequency (RF) core circuit, comprising:
a first diode and a second diode, wherein the first diode is connected between a power source and the external pad, the second diode is connected between the external pad and the ground, and the first diode and the second diode are connected in series;
a third diode and a fourth diode, wherein the third diode is connected between the power source and the I/O port, the fourth diode is connected between the I/O port and the ground, and the third diode and the fourth diode are connected in series;
a fifth diode and a sixth diode connected between the external pad and the I/O port reversely in parallel;
a first inductor connected between the external pad and the ground; and
a second inductor connected between the I/O port and the ground,
wherein the operation frequency of the RF core circuit is ω,
wherein the equivalent capacitance of each diode is C ESD and
wherein the inductance of each inductor is 1/(C ESD ω 2 ).
2. The band-pass structure ESD protection circuit of claim 1 , wherein the first inductor and the second inductor are spiral inductors.
3. The band-pass structure ESD protection circuit of claim 1 , wherein the RF core circuit and the band-pass structure ESD protection circuit are fabricated by gallium arsenic (GaAs) heterojunction bipolar transistor process.
4. The band-pass structure ESD protection circuit of claim 1 , wherein the RF core circuit and the band-pass structure ESD protection circuit are integrated in a chip.
5. The band-pass structure ESD protection circuit of claim 1 , wherein the band-pass structure ESD protection circuit provides protection of ESD stress in human body model.
6. The band-pass structure ESD protection circuit of claim 1 , wherein band-pass structure ESD protection circuit provides protection of ESD stress in machine model.
7. The band-pass structure ESD protection circuit of claim 1 , wherein the RF core circuit is selected from one of a RF transceiver, a low noise amplifier, a power amplifier, or a mixer.
8. The band-pass structure ESD protection circuit of claim 1 , wherein the external pad is connected to an antenna or another I/O element.
9. A band-pass structure ESD protection circuit which is connected between an external pad and an I/O port of an RF core circuit, comprising:
a plurality of first diodes and second diodes, wherein each pair of first diode and second diode is connected between a power source and the ground in series;
at least one pair of third diode and fourth diode, wherein each pair of third diode and fourth diode is connected between adjacent pairs of first diodes and second diodes reversely in parallel;
a first inductor connected between the external pad and the ground; and
a second inductor connected between the I/O port and the ground,
wherein the operation frequency of the RF core circuit is ω,
wherein the equivalent capacitance of each diode is C ESD and
wherein the inductance of each inductor is 1/(C ESD ω 2 ).
10. The band-pass structure ESD protection circuit of claim 9 , wherein the first inductor and the second inductor are spiral inductors.
11. The band-pass structure ESD protection circuit of claim 9 , wherein the RF core circuit and the band-pass structure ESD protection circuit are fabricated by GaAs heterojunction bipolar transistor process.