Processes for photolithography

1. A method for processing a photoresist composition, comprising:

(a) applying on a substrate a layer of a photoresist composition;

(b) immersion exposing the photoresist layer to radiation activating for the photoresist composition, wherein the exposed photoresist layer does not have an overcoated barrier layer;

(c) prior to developing, decreasing the water contact angle of the exposed photoresist layer including treating the exposed photoresist layer with a fluid composition that comprises (i) one or more non-solvents for the photoresist composition and (ii) one or more solvents for the photoresist composition; and

(d) developing the treated photoresist layer with an aqueous alkaline developer composition to provide a photoresist relief image.

2. The method of claim 1 wherein the photoresist composition comprises:

(i) one or more resins,

(ii) a photoactive component, and

(iii) one or more materials that are substantially non-mixable with the one or more resins.

3. The method of claim 2 wherein the one or more materials are resins.

4. The method of claim 1 wherein the photoresist composition comprises:

(i) one or more resins,

(ii) a photoactive component, and

(iii) one or more materials that comprise 1) Si substitution; 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles.

5. The method of claim 1 wherein prior to developing, the exposed photoresist layer is treated with a fluid composition that comprises isoamyl ether, hexane, cyclohexane, heptane, octane or their isomers or isomer mixtures, or water.

6. The method of claim 5 wherein the fluid composition further comprises ethyl lactate, propylene glycol methyl ether acetate, propylene glycol methyl ether, dipropylene glycol monomethyl ether or tetrahydrofuran.

7. A method for processing a photoresist composition, comprising:

(a) applying on a substrate a photoresist composition;

(b) immersion exposing the photoresist layer to radiation activating for the photoresist composition;

(c) prior to developing, removing a portion of the exposed photoresist layer; and

(d) developing the treated photoresist layer to provide a photoresist relief image.

8. A method for processing a photoresist composition, comprising:

(a) applying on a substrate a layer of a photoresist composition;

(b) exposing the photoresist layer to radiation activating for the photoresist composition wherein the exposed photoresist layer does not have an overcoated barrier layer;

(c) prior to developing, treating the exposed photoresist composition layer with a solvent composition that comprises (i) one or more non-solvents for the photoresist composition and (ii) one or more solvents for the photoresist composition, wherein the treating removes a portion but not all of the exposed photoresist layer;

(d) developing the treated photoresist layer to provide a photoresist relief image.

9. The method of claim 8 wherein prior to developing, the exposed photoresist layer is removed with a fluid composition that comprises isoamyl ether, hexane, cyclohexane, heptane, octane or their isomers or isomer mixtures, or water.

10. The method of claim 9 wherein the fluid composition further comprises ethyl lactate, propylene glycol methyl ether acetate, propylene glycol methyl ether, dipropylene glycol monomethyl ether or tetrahydrofuran.

11. The method of claim 8 wherein not more than 50 percent of the exposed photoresist layer thickness is removed prior to development.

12. The method of claim 8 wherein prior to developing, the exposed photoresist layer is treated with a fluid composition that comprises isoamyl.

13. The method of claim 12 wherein the fluid composition further comprises propylene glycol methyl ether acetate.

14. The method of claim 8 wherein the fluid composition further comprises propylene glycol methyl ether acetate.

15. The method of claim 8 wherein the photoresist layer is immersion exposed.