IP Library › Granted Patent US 8,563,914
Granted Patent B2
US 8,563,914 · App. 12/801,196 · Granted Oct 22, 2013

Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays

Inventors: Jung-chak Ahn (Yongin-si, KR); Kyung-ho Lee (Suwon-si, KR); Shay Hamami (Seongnam-si, KR); Young-hwan Park (Namyangju-si, KR)
Assignee: Samsung Electronics Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,563,914
App. No.
12/801,196
Granted
Oct 22, 2013
Kind
B2
Abstract

A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.

Claims (19)

1. A unit pixel comprising:

a photodetector configured to generate charges;

a transmission transistor configured to transmit the charges generated from the photodetector to a floating diffusion area based on a transmission signal;

a reset transistor configured to apply an initialization voltage to the floating diffusion area; and

a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal configured to receive a boosting voltage, the transmission signal and boosting voltage being independent from one another, wherein the boosting capacitor is configured to receive the boosting voltage only when the reset transistor is turned off and the transmission transistor is turned off.

2. A pixel array comprising:

two-dimensionally arranged unit pixels, wherein each unit pixel includes,

a photodetector configured to generate charges,

a transmission transistor configured to transmit the charges generated from the photodetector to a floating diffusion area based on a transmission signal,

a reset transistor configured to apply an initialization voltage to the floating diffusion area, and

a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal configured to receive a boosting voltage, the boosting voltage being transmitted through a line that is commonly connected to the second terminals of the boosting capacitors of a plurality of unit pixels arranged in one horizontal line or one vertical line, the transmission signal and boosting voltage being independent from one another, wherein the boosting capacitor is configured to receive the boosting voltage only when the reset transistor is turned off and the transmission transistor is turned off.

3. A photodetecting device comprising:

a pixel array comprising two-dimensionally arranged unit pixels; and

a decoder for controlling the pixel array,

wherein each unit pixel includes,

a photodetector configured to generate charges,

a transmission transistor configured to transmit the charges generated from the photodetector to a floating diffusion area based on a transmission signal,

a reset transistor configured to apply an initialization voltage to the floating diffusion area, and

a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal configured to receive a boosting voltage, the boosting voltage being transmitted through a line that is commonly connected to the second terminals of the boosting capacitors of a plurality of unit pixels arranged in one horizontal line or one vertical line, the transmission signal and boosting voltage being independent from one another, wherein the boosting capacitor is configured to receive the boosting voltage only when the reset transistor is turned off and the transmission transistor is turned off.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2010
From: AHN, JUNG-CHAK; LEE, KYUNG-HO; HAMAMI, SHAY; PARK, YOUNG-HWAN
To: SAMSUNG ELELCTRONICS CO., LTD.
Reel/Frame 024490/0812 →
Priority Claims (1)
KR 10-2009-0075732 · Aug 17, 2009 · national
Continuity (1)
Related Publication 20110036969A1 · Feb 17, 2011