Solid-state image sensing device, analog-digital conversion method of solid-state image sensing device, and electronic apparatus

1. A solid-state image sensing device comprising:

a pixel array unit in which pixels containing photoelectric conversion devices are arranged in a matrix and a vertical signal line is wired with respect to each pixel column;

an analog-digital conversion circuit provided with respect to each pixel column of the pixel array unit and having a comparator using an analog signal supplied from the pixel through the vertical signal line as a comparison target input and a counter that measures a time from start of comparison to completion of the comparison of the comparator;

a reference signal generating unit that generates plural reference signals with ramp waveforms;

a first switch that, in a thinning readout mode of reading out signals from pixels of a specific group of pixel columns of the pixel array unit to the vertical signal line, shorts the vertical signal line belonging to one pixel column of the specific group of pixel columns and the vertical signal line belonging to another group of pixel columns than the specific group of pixel columns from pixels of which no signals are readout; and

a second switch that, in the thinning readout mode, provides the plural reference signals as comparison criterion inputs to the comparator belonging to the one pixel column and the comparator belonging to the another group of pixel columns than the specific group of pixel columns, respectively.

2. The solid-state image sensing device according to claim 1 , wherein the pixels of the another group of pixel columns than the specific group of pixel columns are electrically separated from the vertical signal line in the thinning readout mode.

3. The solid-state image sensing device according to claim 1 , wherein, in an all-pixel readout mode of reading out signals from all pixels of the pixel array unit, the first switch is turned off, and the second switch provides a single reference signal of the plural reference signals to the comparators belonging to all pixel columns of the pixel array unit as the comparator criterion input.

4. The solid-state image sensing device according to claim 3 , wherein, when the plural reference signals are two reference signals, a dynamic range of one reference signal of the two reference signals used in the thinning readout mode is ½ of a dynamic range of the single reference signal used in the all-pixel readout mode.

5. The solid-state image sensing device according to claim 4 , wherein the other reference signal of the two reference signals is a signal obtained by subtracting an offset of ½ of the dynamic range of the single reference signal from the one reference signal.

6. The solid-state image sensing device according to claim 4 , wherein the other reference signal of the two reference signals is a signal obtained by subtracting an offset of ½ of the dynamic range of the single reference signal from the one reference signal and having a gradient exactly opposite to that of the one reference signal.

7. An analog-digital conversion method of a solid-state image sensing device, in analog-digital conversion of a solid-state image sensing device including

a pixel array unit in which pixels containing photoelectric conversion devices are arranged in a matrix and a vertical signal line is wired with respect to each pixel column,

an analog-digital conversion circuit provided with respect to each pixel column of the pixel array unit and having a comparator using an analog signal supplied from the pixel through the vertical signal line as a comparison target input and a counter that measures a time from start of comparison to completion of the comparison of the comparator, and

a reference signal generating unit that generates plural reference signals with ramp waveforms,

the method comprising the steps of:

in a thinning readout mode of reading out signals from pixels of a specific group of pixel columns of the pixel array unit to the vertical signal line, shorting the vertical signal line belonging to one pixel column of the specific group of pixel columns and the vertical signal line belonging to another group of pixel columns than the specific group of pixel columns from pixels of which no signals are readout; and

providing the plural reference signals as comparison criterion inputs to the comparator belonging to the one pixel column and the comparator belonging to the another group of pixel columns than the specific group of pixel columns, respectively.

8. An electronic apparatus comprising a solid-state image sensing device including:

a pixel array unit in which pixels containing photoelectric conversion devices are arranged in a matrix and a vertical signal line is wired with respect to each pixel column;

an analog-digital conversion circuit provided with respect to each pixel column of the pixel array unit and having a comparator using an analog signal supplied from the pixel through the vertical signal line as a comparison target input and a counter that measures a time from start of comparison to completion of the comparison of the comparator;

a first switch that, in a thinning readout mode of reading out signals from pixels of a specific group of pixel columns of the pixel array unit to the vertical signal line, shorts the vertical signal line belonging to one pixel column of the specific group of pixel columns and the vertical signal line belonging to another group of pixel columns than the specific group of pixel columns from pixels of which no signals are readout;

a reference signal generating unit that generates plural reference signals with ramp waveforms; and

a second switch that, in the thinning readout mode, provides the plural reference signals as comparison criterion inputs to the comparator belonging to the one pixel column and the comparator belonging to the another group of pixel columns than the specific group of pixel columns, respectively.