Method for manufacturing semiconductor device, and semiconductor manufacturing apparatus used in said method
This method includes an electrode pad forming process for forming an electrode pad on a substrate, a solder bump forming process for forming a solder bump on the electrode pad, at least part of the surface of the solder bump being covered with a flux, and an oxygen exposure process for supplying an oxygen gas having reactive properties, such as an ozone (O 3 ) gas, to the solder bump.
1 . A method for manufacturing a semiconductor device, comprising:
forming an electrode pad over a substrate;
forming a solder bump over said electrode pad, at least part of a surface of said solder bump being covered with flux; and
exposing said solder bump to oxygen gas reactive therewith.
2 . The method as claimed in claim 1 , wherein said oxygen gas is ozone gas.
3 . The method as claimed in claim 2 , wherein said exposing the solder bump to the oxygen gas includes exposing said solder bump to said ozone gas for 20 seconds or longer.
4 . The method as claimed in claim 3 , wherein said exposing the solder bump to the oxygen gas includes exposing said solder bump to said ozone gas for 40 seconds or shorter.
5 . The method as claimed in claim 1 , wherein said exposing the solder bump to the oxygen gas includes irradiating said solder bump with oxygen-containing plasma.
6 . The method as claimed in claim 1 , wherein said exposing the solder bump to the oxygen gas includes forming an oxide film over said solder bump, and said method further comprising exposing said solder bump to reduction gas to reduce said oxide film, said exposing the solder bump to the gas being performed after said exposing the solder bump to the oxygen gas.
7 . The method as claimed in claim 6 , wherein said exposing the solder bump to the gas includes irradiating said solder bump with hydrogen plasma.
8 . The method as claimed in claim 1 , wherein
said forming the solder bump includes:
applying solder containing flux onto said electrode pad; and
forming said solder bump by melting said solder applied onto said electrode pad.
9 . The method as claimed in claim 1 , wherein
said forming the solder bump includes:
forming a solder-plate film over said electrode pad by a plating technique;
applying flux onto said solder-plate film; and
forming said solder bump by melting said solder-plate film to which said flux is applied.
10 . A semiconductor manufacturing apparatus comprising:
a stage over which a substrate is placed, an electrode pad being formed over said substrate, flux-containing solder being applied onto said electrode pad;
a heating unit that melts said solder applied onto said electrode pad; and
an oxygen supply unit that supplies an oxygen gas reactive with a solder bump formed through melting of said solder.
11 . The semiconductor manufacturing apparatus as claimed in claim 10 , further comprising:
a reduction gas supply unit that supplies reduction gas for reducing an oxide film formed by said reactive oxygen gas.
12 . The semiconductor manufacturing apparatus as claimed in claim 11 , further comprising:
a plasma generating unit that generates plasma of said reduction gas.