Method of manufacturing semiconductor device
View Patent ↗A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.
1. A method of manufacturing a semiconductor device, connecting between a first bonding point and a second bonding point using a wire, the method comprising:
a bump forming step of forming a bump by folding the wire to be stacked on the second bonding point, the bump including a bent wire convex portion on an opposite side from the first bonding point;
a bonding step of looping the wire from the first bonding point toward the bump, positioning an inner chamfer of a capillary above the bent wire convex portion, bonding the wire by pressing the wire to an upper surface of the bump with a face portion at a tip end of the capillary, and forming a wire bent portion having a cut surface smaller than a cross-section of the wire on a side of the bent wire convex portion by pressing the wire to the bent wire convex portion with the inner chamfer; and
a wire cutting step comprising pulling the wire up and cutting the wire at the wire bent portion.
2. The method according to claim 1 , wherein
the bump forming step includes a sloped wedge forming step of forming a sloped wedge by folding the wire to be stacked on the second bonding point and pressing the wire to the bent wire convex portion with the face portion at the tip end of the capillary, and
the bonding step bonds the wire by pressing the wire to the sloped wedge.
3. The method according to claim 1 , wherein
the wire bent portion has a bow-shaped cross section.
4. A method of manufacturing a semiconductor device, connecting between a first bonding point and a second bonding point using a wire, the method comprising:
a bump forming step of forming a bump by folding the wire to be stacked on the second bonding point, the bump including a bent wire convex portion on an opposite side from the first bonding point;
a bonding step of looping the wire from the first bonding point toward the bump, and bonding the wire by pressing the wire to an upper surface of the bump with a face portion at a tip end of the capillary;
a bent portion forming step of, after raising the capillary from an upper surface of the bump to a position at which a height of a tip end of the capillary is lower than a height of an upper end of the bent wire convex portion, moving the capillary from the first bonding point in a direction toward the bent wire convex portion, shearing a portion of the wire with a corner of the capillary, and forming a wire bent portion having a cut surface smaller than a cross-section of the wire on a side of the bent wire convex portion by pressing the wire to the bent wire convex portion with the inner chamfer of the capillary; and
a wire cutting step comprising pulling the wire up and cutting the wire at the wire bent portion.
5. A method of manufacturing a semiconductor device, connecting between a first bonding point and a second bonding point using a wire, the method comprising:
a bump forming step including:
forming a bump by folding the wire to be stacked on the second bonding point; the bump including a bent wire convex portion on an opposite side from the first bonding point,
forming a sloped wedge on an upper surface on the side of the first bonding point by pressing the wire with the face portion at the tip end of the capillary,
moving the capillary from the sloped wedge in a direction toward the bent wire convex portion after raising the capillary from an upper surface of the sloped wedge to a height such that a tip end of the capillary is lower than a height of an upper end of the bent wire convex portion, shearing a portion of the wire with a corner of the capillary, and forming a wire bent portion having a cut surface smaller than a cross-section of the wire on a side of the bent wire convex portion by pressing the wire to the bent wire convex portion with the inner chamfer of the capillary, and
pulling the wire up and cutting the wire at the wire bent portion;
a bonding step of looping the wire from the first bonding point toward the bump, and bonding the wire by pressing the wire to an upper surface of the bump with a face portion at a tip end of the capillary;
a bent portion forming step of, after raising the capillary from an upper surface of the sloped wedge to a height such that a tip end of the capillary is lower than a height of an upper end of the bent wire convex portion, moving the capillary from the sloped wedge in a direction toward the bent wire convex portion, shearing a portion of the wire with a corner of the capillary, and forming a wire bent portion having a cut surface smaller than a cross-section of the wire on a side of the bent wire convex portion by pressing the wire to the bent wire convex portion with the inner chamfer of the capillary; and
a wire cutting step comprising pulling the wire up and cutting the wire at the wire bent portion.
6. The method according to claim 4 , wherein
the shear cut surface is substantially parallel with a surface of the semiconductor device including the second bonding point, and
the wire bent portion has a bow-shaped cross section.
7. The method according to claim 5 , wherein
the shear cut surface is substantially parallel with a surface of the semiconductor device including the second bonding point, and
the wire bent portion has a bow-shaped cross section.