TCP-type semiconductor device

1. A tape carrier package (TCP) type semiconductor device connected to a plurality of substrate-side electrodes parallel to each other and each having a linear shape, the TCP type semiconductor device comprising:

a base film;

a semiconductor chip mounted on said base film; and

a plurality of leads formed on said base film, each lead of the plurality of leads comprising a first end and a second end, the first end electrically connecting to said semiconductor chip and the second end electrically connecting to a corresponding one of said plurality of substrate-side electrodes, respectively,

wherein each of said plurality of leads includes an external terminal section extending in a first direction and configured to come in contact with a corresponding one of said plurality of substrate-side electrodes,

wherein a part of said external terminal section of each lead of the plurality of leads comprises a wide section that is formed wider than an other section of said external terminal section, and

wherein a position of said wide section in said first direction is different between adjacent leads of said plurality of leads.

2. The TCP type semiconductor device according to claim 1 , wherein said external terminal section of each lead of said plurality of leads comprises a same length.

3. The TCP type semiconductor device according to claim 1 , wherein a planar direction parallel to said base film and perpendicular to said first direction comprises a second direction, and

respective edge locations of said external terminal section of each lead of said plurality of leads are aligned in said second direction.

4. The TCP type semiconductor device according to claim 1 , wherein said adjacent leads comprise a first lead and a second lead, and

said wide section of said first lead and said wide section of said second lead partially overlap in said first direction with each other.

5. The TCP type semiconductor device according to claim 1 , wherein said adjacent leads comprise a first lead and a second lead,

wherein said external terminal section of each of the first and second lead further comprises:

a normal section comprising a width that is smaller than a width of said wide section; and

a narrow section comprising a width that is smaller than a width of said normal section, and

wherein said wide section of said first lead and said narrow section of said second lead face each other.

6. The TCP type semiconductor device according to claim 1 , wherein a planar direction parallel to said base film and perpendicular to said first direction comprises a second direction,

wherein said plurality of leads are grouped into at least two groups, and

wherein in each of said at least two groups, said wide section is aligned in said second direction.

7. The TCP type semiconductor device according to claim 1 , wherein said wide section comprises a test pad section that is configured to come in contact with a probe at a time of test.

8. The TCP type semiconductor device according to claim 1 , wherein each substrate-side electrode of the plurality of substrate side electrodes comprises approximately a same width.

9. The TCP type semiconductor device according to claim 1 , wherein, at a position where the external terminal section of each lead of the plurality of leads is configured to come in contact with the corresponding one of the plurality of substrate-side electrodes, the external terminal section of each lead comprises substantially a same width.

10. The TCP type semiconductor device according to claim 1 , wherein the external terminal section of each lead of the plurality of leads further comprises:

a normal section comprising a width that is less than a width of the wide section; and

a narrow section comprising a width that is less than a width of the normal section, and

wherein, at a position where the external terminal section of each lead of the plurality of leads is configured to come in contact with the corresponding one of the plurality of substrate-side electrodes, the external terminal section of each lead comprises the normal width.

11. The TCP type semiconductor device according to claim 1 , wherein the plurality of leads comprises a first lead, a second lead and a third lead, and

wherein the external terminal section of each of the first, second and third leads comprises:

a normal section comprising a width that is less than a width of the wide section; and

a narrow section comprising a width that is less than a width of the normal section.

12. The TCP type semiconductor device according to claim 5 , wherein said width of said normal section is greater than or equal to a width of said each substrate-side electrode.

13. The TCP type semiconductor device according to claim 5 , wherein the width of the normal section is equal to a width of each substrate-side electrode of the plurality of substrate-side electrodes.

14. The TCP type semiconductor device according to claim 5 , wherein the narrow section comprises a corrugated shape.

15. The TCP type semiconductor device according to claim 10 , wherein the corresponding one of the plurality of substrate side electrodes comprises a width that is less than or equal to the width of the normal section.

16. The TCP type semiconductor device according to claim 11 , wherein the first lead is adjacent to a first side of the second lead and the third lead is adjacent on a second side of the second lead, and

wherein the wide section of the second lead faces the narrow section each of the first and third lead.

17. The TCP type semiconductor device according to claim 16 , wherein the plurality of leads further comprises a fourth lead that is adjacent to the third lead, the fourth lead comprising a same configuration of narrow, normal and wide sections as the first lead, and

wherein the narrow section of each of the third and fourth lead face each other.

18. A tape carrier package (TCP) type semiconductor device comprising:

a base film having a plurality of device regions each of which is surrounded by a cut line, wherein said base film is cut along said cut line; and

a plurality of semiconductor devices placed within said plurality of device regions, respectively,

wherein each of said plurality of semiconductor devices is connected to a plurality of substrate-side electrodes parallel to each other and each having a linear shape,

wherein said each semiconductor device comprises:

a semiconductor chip mounted on said base film; and

a plurality of leads formed on said base film, each lead of the plurality of leads comprising a first end and a second end, the first end electrically connecting to said semiconductor chip and the second end electrically connecting to a corresponding one of said plurality of substrate-side electrodes, respectively,

wherein each of said plurality of leads includes an external terminal section extending in a first direction and configured to come in contact with a corresponding one of said plurality of substrate-side electrodes,

wherein a part of said external terminal section of each lead of the plurality of leads comprises a wide section that is formed wider than an other section of said external terminal section, and

wherein a position of said wide section in said first direction is different between adjacent leads of said plurality of leads.