Semiconductor device, external connection terminal, method of manufacturing semiconductor device, and method of manufacturing external connection terminal

1 . A semiconductor device comprising:

an electrode pad; and

an external connection terminal connected to said electrode pad,

wherein said external connection terminal contains Sn which is equal to or more than 50 wt %, Sn and Pb which are equal to or more than 90 wt % in total or Pb which is equal to or more than 85 wt %, and the surface of said external connection terminal is coated with an Au layer.

2 . The semiconductor device as set forth in claim 1 , wherein the thickness of said Au layer is equal to or more than 10 nm and equal to or less than 1 μm.

3 . The semiconductor device as set forth in claim 1 ,

wherein the weight of said Au layer is equal to or less than 0.6% of the weight of said external connection terminal.

4 . The semiconductor device as set forth in claim 1 ,

wherein said external connection terminal contains Sn which is equal to or more than 90 wt %, Ag which is equal to or more than 1 wt % and equal to or less than 4 wt %, and Cu which is equal to or more than 0.1 wt % and equal to or less than 0.8 wt %.

5 . The semiconductor device as set forth in claim 4 ,

wherein said external connection terminal further contains at least one of Ni which is equal to or more than 0.015 wt % and equal to or less than 0.08 wt %, and Co which is equal to or more than 0.002 wt % and equal to or less than 0.02 wt %.

6 . The semiconductor device as set forth in claim 4 ,

wherein said external connection terminal further contains at least one of P which is equal to or more than 0.0002 wt % and equal to or less than 0.01 wt %, and Ge which is equal to or more than 0.002 wt % and equal to or less than 0.01 wt %.

7 . The semiconductor device as set forth in claim 4 , further comprising:

an interconnect substrate; and

a semiconductor chip mounted in one surface of said interconnect substrate,

wherein said electrode pad is formed in the other surface of said interconnect substrate.

8 . The semiconductor device as set forth in claim 1 , further comprising:

a semiconductor chip,

wherein said external connection terminal contains Pb which is equal to or more than 85 wt %, and

wherein said electrode pad is formed in said semiconductor chip.

9 . An external connection terminal, connected to an electrode pad of an interconnect substrate or a semiconductor device, that contains:

Sn which is equal to or more than 50 wt %;

Sn and Pb which are equal to or more than 90 wt % in total; or

Pb which is equal to or more than 85 wt %,

wherein the surface of said external connection terminal is coated with an Au layer.

10 . The external connection terminal as set forth in claim 9 , wherein the thickness of the Au layer is equal to or more than 10 nm and equal to or less than 1 μm.

11 . The external connection terminal as set forth in claim 9 , wherein the weight of the Au layer is equal to or less than 0.6 wt % of said external connection terminal.

12 . The external connection terminal as set forth in claim 9 , wherein said external connection terminal contains Sn which is equal to or more than 90 wt %, Ag which is equal to or more than 1 wt % and equal to or less than 4 wt %, and Cu which is equal to or more than 0.1 wt % and equal to or less than 0.8 wt %.

13 . The external connection terminal as set forth in claim 12 , wherein said external connection terminal further contains at least one of Ni which is equal to or more than 0.015 wt % and equal to or less than 0.08 wt %, and Co which is equal to or more than 0.002 wt % and equal to or less than 0.02 wt %.

14 . The external connection terminal as set forth in claim 12 , wherein said external connection terminal further contains at least one of P which is equal to or more than 0.0002 wt % and equal to or less than 0.01 wt %, and Ge which is equal to or more than 0.002 wt % and equal to or less than 0.01 wt %.

15 . A method of manufacturing a semiconductor device, comprising:

attaching an external connection terminal containing Sn which is equal to or more than 50 wt %, Sn and Pb which are equal to or more than 90 wt % in total, or Pb which is equal to or more than 85 wt % to an electrode pad; and

coating the surface of said external connection terminal with an Au layer.

16 . The method of manufacturing the semiconductor device as set forth in claim 15 , further comprising:

connecting said electrode pad with an interconnect through said external connection terminal by contacting said external connection terminal with an interconnect of a substrate and melting said external connection terminal, after said step of coating the surface of said external connection terminal with the Au layer.

17 . The method of manufacturing the semiconductor device as set forth in claim 15 , wherein said step of coating the surface of said external connection terminal with the Au layer is a step of forming said Au layer using plating.

18 . A method of manufacturing an external connection terminal, comprising:

manufacturing the external connection terminal containing Sn which is equal to or more than 50 wt %, Sn and Pb which are equal to or more than 90 wt % in total, or Pb which is equal to or more than 85 wt %; and

coating the surface of said external connection terminal with an Au layer.

19 . The method of manufacturing the external connection terminal as set forth in claim 18 ,

wherein said step of coating the surface of said external connection terminal with the Au layer is a step of forming said Au layer using plating.