Current sensor, current measuring module and method for measuring current

1. A current sensor for measuring a current in a conductor, comprising:

two magnetic field sensors located adjacent to the conductor, wherein the two magnetic field sensors are at least two-dimensional magnetic field sensors having two measuring directions; and

an integrated evaluation unit configured to:

(a) measure values of the magnetic field sensors to determine: (i) a test field in the direction of the field lines of the magnetic field based on the current flowing in the conductor, and (ii) an interference field in a direction perpendicular to field lines of the magnetic field based on the current flowing in the conductor;

(b) detect an inhomogeneity of the interference field from the field strengths of the determined components of the interference field;

(c) determine a useful field from the field strengths of the test field and the inhomogeneity of the interference field; and

(d) determine the current in the conductor from the useful field.

2. The current sensor as recited in claim 1 , wherein a first measuring direction of the magnetic field sensors is in the direction of field lines of a magnetic field based on a current flowing in the conductor, and wherein a second measuring direction is perpendicular to the first measuring direction.

3. The current sensor as recited in claim 2 , wherein the two magnetic field sensors are three-dimensional magnetic field sensors.

4. The current sensor as recited in claim 3 , wherein the two magnetic field sensors are symmetrically situated on two sides of the conductor.

5. The current sensor as recited in claim 3 , further comprising:

(b) determining the current in the conductor from the test field and the interference field.

6. The current sensor as recited in claim 5 , further comprising:

a housing surrounding the conductor, the two magnetic field sensors and the evaluation unit.

7. The current sensor as recited in claim 5 , further comprising:

a carrier fastened to the conductor, wherein the magnetic field sensors are situated on the carrier.

8. The current sensor as recited in claim 2 , wherein the two magnetic field sensors are symmetrically situated on two sides of the conductor.

9. The current sensor as recited in claim 8 , wherein the two magnetic field sensors are selected from the group consisting of: Hall element sensor, anisotropic magnetoresistance sensors, giant magnetoresistance sensors, and fluxgate sensors.

10. A method for measuring current in a conductor, comprising:

providing a current sensor having at least two magnetic field sensors adjacent to the conductor, wherein the at least two magnetic field sensors are at least two-dimensional magnetic field sensors;

detecting a measuring field using measured values of the magnetic field sensors;

determining the field strengths of a test field in the direction of the field lines of a magnetic field based on a current flowing in the conductor;

determining the field strengths of a component of an interference field in a direction perpendicular to the field lines of the magnetic field based on the current flowing in the conductor;

detecting an inhomogeneity of the interference field from the field strengths of the determined components of the interference field;

determining a useful field from the field strengths of the test field and the inhomogeneity of the interference field

and determining the current in the conductor from the useful field.

11. The method as recited in claim 10 , wherein the magnetic field sensors are oriented in such a way that one measuring direction coincides with the direction of the field lines of the magnetic field based on the current flowing in the conductor.

12. The method as recited in claim 11 , wherein the at least two magnetic field sensors are three-dimensional magnetic field sensors, and wherein the field strengths of the interference field are determined in one plane perpendicular to the field lines of the magnetic field based on the current flowing in the conductor.

13. The method as recited in claim 12 , wherein the inhomogeneity of the interference field is detected in the direction of the maximum field strength of the interference field within the one plane.